Applied Physics Letters, 31 March 2008
Appl. Phys. Lett. 92, 133302 (2008) (3 pages)
©2008 American Institute of Physics. All rights reserved. 
Permissions for Reuse
Next section | Up: Issue Table of Contents
Go to: Previous Article | Next Article
Other formats: HTML (all one file, 25 kB + graphics) | PDF ( kB)
Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene
Byoungnam Park,1 Insik In,1 (a)Padma Gopalan,1 Paul G. Evans,1 (b)Seth King,2 and Paul F. Lyman2
1Department Materials Science and Engineering and Materials Science Program, University of Wisconsin, 1509 University Ave., Madison, Wisconsin 53706, USA
2Department of Physics, University of Wisconsin, 1900 E. Kenwood Blvd., Milwaukee, Wisconsin 53201, USA
(Received: 23 January 2008; accepted: 13 March 2008; published online: 31 March 2008)We report amorphous rubrene thin film transistors with a polystyrene intermediate layer on the SiO2 gate dielectric that have hole mobilities up to 0.01 cm2/V s. This improvement by two orders of magnitude over devices formed on SiO2 alone occurs without the crystallization of rubrene. The enhanced charge transport is a result of the more planar growth and subsequent better geometrical connection of the first molecular layers of rubrene. Ambipolar conduction in the rubrene suggests that polystyrene minimizes the concentration of interfacial electron trap states. ©2008 American Institute of Physics
Contents
Next section | Up: Issue Table of Contents
Go to: Previous Article | Next Article
Other formats: HTML (all one file, 25 kB + graphics) | PDF ( kB)