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Fig. 1. (Color online) AFM image of (a) a PS film on SiO₂, and rubrene thin films on (b) SiO₂ and (c) PS. The difference in rubrene morphology between films on SiO₂ and PS is visible in the cross sections plotted below (b) and (c). First citation in article

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Fig. 2. (a) Transistor characteristics of 145  nm thick rubrene films deposited on SiO₂ (circles) and PS (squares). (b) The mobility of holes in the saturation regime of transistor operation as a function of the average thickness of the rubrene film. The channel length for this device was 100  µm. First citation in article

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Fig. 3. Plots of −I_D vs V_G (squares) and (−I_D)^1/2 vs V_G (circles) for (a) p- and (b) n-channel operations. The drain voltages for (a) and (b) are −60 and 60  V, respectively. The channel length for this device was 300  µm. First citation in article