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Fig. 1. (Color online) (a) Structure and dimensions of the diindenoperylene (DIP) molecule. (b) Scheme of the out-of-plane stacking induced by the DIP motif. (c) Single DIP layer Schottky barrier cell with ITO bottom and Ag top contact. First citation in article

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Fig. 2. (Color online) X-ray scan along the surface normal measured on a nominally 220  nm thick DIP film on ITO. Diffraction peaks up to the sixth order and Laue oscillations around the first order Bragg peak (see inset) indicate the high structural quality of the DIP layer along the c direction. First citation in article

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Fig. 3. (Color online) Spectrally resolved photocurrent measured on a 142  nm thick DIP Schottky barrier device illuminated at a constant photon rate of 5×10¹²  s⁻¹  cm⁻². Comparing the DIP absorption characteristics (blue curve) with the photocurrent for illumination through the Ag and ITO contacts, a symbatic behavior can be established. First citation in article

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Fig. 4. (Color online) Correlation between photocurrent and absorption length for a 142  nm DIP cell illuminated via the active Ag (upper part) and inactive ITO electrodes (lower part). From the linear slope, the exciton diffusion length is estimated to be 89  nm for Ag/DIP and 103  nm for ITO/DIP. The internal quantum efficiency ₁₂ results to 5.2% (Ag/DIP) and 3.0% (ITO/DIP), respectively. In addition, the full diffusion model has been fitted under the assumption that the exciton diffusion length is equal to the film thickness (black curves). First citation in article