Applied Physics Letters, 12 May 2008
Appl. Phys. Lett. 92, 192502 (2008) (3 pages)
©2008 American Institute of Physics. All rights reserved. 
Permissions for Reuse
Next section | Up: Issue Table of Contents
Go to: Previous Article | Next Article
Other formats: HTML (all one file, 31 kB + graphics) | PDF ( kB)
Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs
S. Mack, R. C. Myers, J. T. Heron, A. C. Gossard, and D. D. Awschalom(a)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
(Received: 21 March 2008; accepted: 15 April 2008; published online: 13 May 2008)Heavily alloyed, 100 nm Ga1−xMnxAs (x>0.1) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow range of stoichiometric growth conditions. In contrast to a prediction of the Zener model of hole-mediated ferromagnetism, the Curie temperature of the stoichiometric material is independent of x (for x>0.1), while substitutional Mn content is proportional to x within a large window of growth conditions. ©2008 American Institute of Physics
Contents
Next section | Up: Issue Table of Contents
Go to: Previous Article | Next Article
Other formats: HTML (all one file, 31 kB + graphics) | PDF ( kB)