Applied Physics Letters, 26 May 2008
Appl. Phys. Lett. 92, 213301 (2008) (3 pages)
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Creating large area molecular electronic junctions using atomic layer deposition

Michael J. Preiner and Nicholas A. Melosh(a)

Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall-Stanford, California 94305, USA

(Received: 7 March 2008; accepted: 3 April 2008; published online: 27 May 2008)

We demonstrate a technique for creating large area, electrically stable molecular junctions. We use atomic layer deposition to create nanometer thick passivating layers of aluminum oxide on top of self-assembled organic monolayers with hydrophilic terminal groups. This layer acts as a protective barrier and allows simple vapor deposition of the top electrode without short circuits or molecular damage. This method allows nonshorting molecular junctions of up to 9  mm2 to be easily and reliably fabricated. The effect of passivation on molecular monolayers is studied with Auger and x-ray spectroscopy, while electronic transport measurements confirm molecular tunneling as the transport mechanism for these devices. ©2008 American Institute of Physics


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