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Fig. 1. (a) Structure of the devices with varying thickness of the Almq₃ fluorescent emissive layer. (b) EL spectra for devices of type 1 with X=5.0–15.0  nm at 80  mA/cm². First citation in article

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Fig. 2. (a) Luminance and J vs V curves for device 2. (b) Dependence of the EQE on the current density of the diode. The inset shows power efficiency vs current density. First citation in article

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Fig. 3. (Color online) EL spectra recorded at various luminances between 150 and 2000  cd/m² showing small variation in the white light characteristics of device 2. Inset: Photograph of one of the pixels operating at 6  V. First citation in article