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Fig. 1. (a) The cation atomic percentage of aluminum incorporated into the Hf_xAl_yO_z films as a function of the fraction of aluminum oxide cycles. The inset shows the corresponding rms roughness and rms roughness/thickness. (b) Cross sectional HRTEM images for (left) a Hf_0.36Al_0.64O_z film deposited on un-nitrided Ge and (right) a Hf_0.38Al_0.62O_z film on nitrided Ge. First citation in article

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Fig. 2. (a) The XANES and (b) Fourier transformed EXAFS spectra of HfO₂, Hf_0.40Al_0.60O_z, and Hf_0.20Al_0.80O_z films. First citation in article

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Fig. 3. C-V characteristics at 1 MHz, 100 kHz, 10 kHz, and 1 kHz for (a) 12 nm HfO₂, (b) 15 nm Hf_0.40Al_0.60O_z, and (c) 15 nm Al₂O₃ and (d) their J-V characteristics. (e) C-V characteristics at 1 MHz for a 5 nm Hf_0.40Al_0.60O_z film and a 4 nm HfO₂ film. First citation in article