CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology

2007 International Conference on Frontiers of Characterization and Metrology

David G. Seiler, National Institute of Standards and Technology, Semiconductor Electronics Division, Gaithersburg, MD, USA ; Alain C. Diebold, University at Albany, College of Nanoscale Science and Engineering, Albany, NY, USA ; Robert McDonald, Technology Associates, Monte Sereno, CA, USA ; C. Michael Garner, Intel, SC1-05, Santa Clara, CA, USA ; Dan Herr, Semiconductor Research Corporation, Research Triangle Park, NC, USA ; Rajinder P. Khosla, National Science Foundation, Elect. and Comm. Systems Div., Arlington, VA, USA ; Erik M. Secula, National Institute of Standards and Technology, Semiconductor Electronics Division, Gaithersburg, MD, USA

Conference Location and Date: Gaithersburg, MD, 27-29 March 2007

Subseries: Materials Physics and Applications

Published October 2007; ISBN 978-0-7354-0441-0, One Volume Print, CD-ROM included; 592 pages; 8.5 X 11 inches, double column; Hardcover; $179.00

Readership: Scientists and engineers interested in the latest advances in measurement technology critically needed to overcome measurement needs for the semiconductor industry.

All papers have been peer-reviewed. As the semiconductor industry continues to move toward silicon nanoelectronics and beyond, the introduction of new materials, innovative processing and assembly, and novel devices brings formidable metrology challenges. We have entered an era where nanotechnology is required to meet the demand for smaller, faster, cheaper, and more complex functional chips. Innovative metrology and characterization methods have become critical. This book emphasizes the frontiers of innovation in the characterization and metrology needed to advance nanoelectronics. It comprises applications in nanoelectronic materials and devices, research and development, and manufacturing and diagnostics. Novel characterization methods for beyond CMOS and extreme CMOS devices are addressed, as well as electrical measurements, gate dielectrics, interconnects, lithography, microscopy, and scanning probes. The Editors believe that this book of collected papers from world-class leaders provides a basis and effective portrayal of the industry's characterization and metrology needs and how they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductors into the nanoelectronic regime. It also provides a foundation for stimulating further advances in metrology and new ideas for research and development.

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