STRESS-INDUCED PHENOMENA IN METALLIZATION: Ninth International Workshop on Stress-Induced Phenomena in Metallization

Ninth International Workshop on Stress-Induced Phenomena in Metallization

Shinichi Ogawa, Advanced Industrial Science and Technology (AIST), Nanodevice Innovation research Center, Tsukuba, Ibaraki, Japan ; Paul S. Ho, The University of Texas at Austin, Interconnect and Packaging Group, Austin, TX, USA ; Ehrenfried Zschech, Fraunhofer Institute for Nondestructive Testing, Dresden, Germany

Conference Location and Date: Kyoto, Japan, 4-7 April 2007

Subseries: Materials Physics and Applications

Published November 2007; ISBN 978-0-7354-0459-5, One Volume, Print; 212 pages; 6 3/8 X 9 1/4 inches; Hardcover; $99.00

Readership: Materials and reliability researchers, process engineers related to LSI interconnect fabrication. Engineers for LSI

All papers were peer reviewed. The conference was on reliability related science in ULSI interconnect, and the main purpose was to discuss the stress induced phenomena in the LSI interconnect among academic researchers and industry engineers to establish academic science and to improve the reliability of ULSI chips.

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