PRINT (PUBLISHED) VERSION
Print Version:  More Info 
You will be directed to Springer for print volume ordering



STRESS-INDUCED PHENOMENA IN METALLIZATION: Ninth International Workshop on Stress-Induced Phenomena in Metallization

Ninth International Workshop on Stress-Induced Phenomena in Metallization

Shinichi Ogawa, Semiconductor Leading Edge Technologies, Inc. (Selete), Back End Process Program, Research Department 2, Tsukuba, Ibaraki, Japan ; Paul S. Ho, The University of Texas at Austin, Interconnect and Packaging Group, Austin, TX, USA ; Ehrenfried Zschech, AMD Saxony LLC., Center for Complex Analysis, Dresden, Germany


AIP Conference Proceedings 945


Conference Location and Date: Kyoto, Japan, 4-7 April 2007


Subseries: Materials Physics and Applications

Published November 2007; ISBN 978-0-7354-0459-5 One Volume, Print; 212 pages; 6 3/8 X 9 1/4 inches; Hardcover; $99.00

Readership: Materials and reliability researchers, process engineers related to LSI interconnect fabrication. Engineers for LSI

All papers were peer reviewed. The conference was on reliability related science in ULSI interconnect, and the main purpose was to discuss the stress induced phenomena in the LSI interconnect among academic researchers and industry engineers to establish academic science and to improve the reliability of ULSI chips.

Related AIP Titles:

CP# Editor(s) Title
931Seiler, et al.CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
929Salamin, et al.NANOTECHNOLOGY AND ITS APPLICATIONS: First Sharjah International Conference on Nanotechnology and Its Applications
901RoueffATOMIC AND MOLECULAR DATA AND THEIR APPLICATIONS: 5th International Conference on Atomic and Molecular Data and Their Applications (ICAMDATA)
894Thompson / ChimentiREVIEW OF PROGRES IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: Volume 26
893Jantsch / SchafflerPHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors
820Thompson / ChimentiREVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: Volume 25
788Seiler, et al.CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005:
786Kuzmany, et al.ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
772Menéndez / Van de WallePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors
760Thompson / ChimentiREVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: Volume 24
741Ho, et al.STRESS-INDUCED PHENOMENA IN METALLIZATION: Seventh International Workshop on Stress-Induced Phenomena in Metallization
723Kuzmany, et al.ELECTRONIC PROPERTIES OF SYNTHETIC NANOSTRUCTURES: XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials
709Michelotti, et al.MICRORESONATORS AS BUILDING BLOCKS FOR VLSI PHOTONICS: International School of Quantum Electronics, 39th Course
700Thompson / ChimentiREVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: Volume 23
683Seiler, et al.CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology
612Baker, et al.STRESS INDUCED PHENOMENA IN METALLIZATION: Sixth International Workshop On Stress Induced Phenomena In Metallization
491Kraft, et al.STRESS INDUCED PHENOMENA IN METALLIZATION: Fifth International Workshop
418Okabayashi, et al.STRESS INDUCED PHENOMENA IN METALLIZATION: Fourth International Workshop
373Ho, et al.STRESS-INDUCED PHENOMENA IN METALLIZATION: Third International Workshop
305Ho, et al.STRESS-INDUCED PHENOMENA IN METALLIZATION: Second International Workshop
263Li, et al.STRESS-INDUCED PHENOMENA IN METALLIZATION: First International Workshop