<?xml version="1.0" encoding="UTF-8"?>
<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns="http://purl.org/rss/1.0/" xmlns:taxo="http://purl.org/rss/1.0/modules/taxonomy/" xmlns:sy="http://purl.org/rss/1.0/modules/syndication/" xmlns:dc="http://purl.org/dc/elements/1.1/">
  <channel rdf:about="http://www.scitation.org/rss/ESLEF6_ESE.xml">
    <title>Electrochemical Society Letters: Electrochemical Synthesis and Engineering - Current Issue</title>
    <link>http://scitation.aip.org/</link>
    <description>Electrochemical Society Letters: Electrochemical Synthesis and Engineering - Current Issue</description>
    <items>
      <rdf:Seq>
        <rdf:li resource="http://link.aip.org/link/?ESL/12/E23/1&amp;agg=rss" />
      </rdf:Seq>
    </items>
  </channel>
  <item rdf:about="http://link.aip.org/link/?ESL/12/E23/1&amp;agg=rss">
    <title>The Effect of Ultraviolet Exposure on Solution Process of Silicon Thin Film</title>
    <link>http://link.aip.org/link/?ESL/12/E23/1&amp;agg=rss</link>
    <description>Dong Lim Kim, Sang Hoon Pak, Si Joon Kim, Seong-Kee Park, and Hyun Jae Kim&lt;br/&gt;  Cyclopentasilane, which has a chemical shift at 3.7 ppm as revealed by H NMR, was used as a precursor for solution-processed Si films after photopolymerization. X-ray photoelectron spectroscopy revealed a Si 2p peak at 99.68 eV, showing a binding energy shift of about 0.3 eV due to a decrease in hyd ... [Electrochem. Solid-State Lett. 12, E23 (2009)] published Mon Aug 17, 2009.</description>
  </item>
</rdf:RDF>

