Electrochemical Society Letters: Semiconductor Devices, Materials, and Processing - Current Issue

A Technique for Converting Perhydropolysilazane to SiO at Low Temperature

Jae-Seo Lee, Jung-Hun Oh, Sung-Woon Moon, Woo-Suk Sul, and Sam-Dong Kim
Spin-coated perhydropolysilazane films on Si(100) substrates were prepared by a dibutyl ether solution and converted into SiO using a variety of low temperature curing methods. From the Fourier transform IR spectroscopy and the refractive index (RI) measurements, the successful conversion to a high ... [Electrochem. Solid-State Lett. 13, H23 (2009)] published Wed Nov 11, 2009.

High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs

G. Goncalves, P. Barquinha, L. Pereira, N. Franco, E. Alves et al.
The effect of oxygen partial pressure on the properties of InOGaO thin films produced by sputtering at room temperature aimed at thin film transistor (TFT) application is reported in this work. When produced in the absence of oxygen, the films are polycrystalline, while in the presence of oxygen, th ... [Electrochem. Solid-State Lett. 13, H20 (2009)] published Wed Nov 11, 2009.

Characteristics of Cerium Oxide for MetalInsulatorMetal Capacitors

C. H. Cheng, H. H. Hsu, W. B. Chen, Albert Chin, and F. S. Yeh
In this article, we describe our successful fabrication of a CeO metalinsulatormetal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9 x 10 A/cm at 1 V and a small VCC-alpha~421 ppm/V were obtained at a high 10.8 fF/[mu]m density for a Pt/CeO/TaN MIM capacitor. The sm ... [Electrochem. Solid-State Lett. 13, H16 (2009)] published Wed Nov 4, 2009.

Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1 x 10 cm Using Coimplantation of Sb and P

Jeehwan Kim, Stephen W. Bedell, Siegfried L. Maurer, Rainer Loesing, and Devendra K. Sadana
One of the greatest challenges in fabricating a Ge-channel n-MOSFET is achieving a high n-type dopant activation within the source and drain regions. Conventional approaches to increase the electrically active doping level have been proven to be unsatisfactory, and typically the highest activation o ... [Electrochem. Solid-State Lett. 13, H12 (2009)] published Wed Nov 4, 2009.

A Low Operating Voltage ZnO Thin Film Transistor Using a High-kappa HfLaO Gate Dielectric

N. C. Su, S. J. Wang, and Albert Chin
This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high-kappa HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (V) of 0.28 V, a small subt ... [Electrochem. Solid-State Lett. 13, H8 (2009)] published Wed Nov 4, 2009.

Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

Samarth Agarwal, Kyle H. Montgomery, Timothy B. Boykin, Gerhard Klimeck, and Jerry M. Woodall
In the fields of solid-state lighting and high efficiency solar photovoltaics (PVs), a need still exists for a material system that can target the 2.32.5 eV energy range. The ZnSe/GaAs system is shown to have great potential. The digital alloy approach can be utilized as a well-ordered design altern ... [Electrochem. Solid-State Lett. 13, H5 (2009)] published Mon Oct 26, 2009.

Chemical Mechanical Planarization of TaN Wafers Using Oxalic and Tartaric Acid Based Slurries

S. V. S. B. Janjam, B. C. Peethala, D. Roy, and S. V. Babu
This work demonstrates that silica-based slurries (pH 38) using oxalic or tartaric acid as a complexing agent can be used for efficient, low pressure chemical mechanical polishing of tantalum nitride (diffusion barrier) in the fabrication of semiconductor devices. Depending on their pH and their oxi ... [Electrochem. Solid-State Lett. 13, H1 (2009)] published Thu Oct 22, 2009.