Journal of Electrochemical Society: Dielectric Science and Materials - Current Issue http://scitation.aip.org/ Journal of Electrochemical Society: Dielectric Science and Materials - Current Issue Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO Gate Dielectrics http://link.aip.org/link/?JES/157/G26/1&agg=rss Johan Swerts, Nick Peys, Laura Nyns, Annelies Delabie, Alexis Franquet et al.<br/> The downscaling of high-k/metal gate transistor devices requires thin-film deposition processes that deliver not only an outstanding high-k oxide quality, but also a strict interfacial oxide thickness control in the sub-1 nm thickness range. To study the impact of atomic layer deposition (ALD) proce ... [J. Electrochem. Soc. 157, G26 (2009)] published Fri Nov 20, 2009. Dielectric Response of TaO, NbO, and NbTaO from First-Principles Investigations http://link.aip.org/link/?JES/157/G20/1&agg=rss S. Clima, G. Pourtois, A. Hardy, S. Van Elshocht, M. K. Van Bael et al.<br/> High-kappa dielectrics are intensively investigated as a replacement for SiO in integrated nanoelectronics. In particular, for the next generation of dynamic random access memory metalinsulatormetal capacitors, the Ta- and Nb-based oxides are among the most interesting candidates that display a rela ... [J. Electrochem. Soc. 157, G20 (2009)] published Fri Nov 13, 2009. Properties of Ultrathin High Permittivity (NbTa)O Films Prepared by Aqueous Chemical Solution Deposition http://link.aip.org/link/?JES/157/G13/1&agg=rss A. Hardy, S. Van Elshocht, D. Dewulf, S. Clima, N. Peys et al.<br/> Ultrathin (NbTa)O films, with thicknesses from ~3 to ~25 nm, were deposited by chemical solution deposition starting from aqueous precursor solutions. The film's dielectric properties were characterized by capacitancevoltage and currentvoltage measurements. Permittivities ranged from 20 to 31 aft ... [J. Electrochem. Soc. 157, G13 (2009)] published Fri Nov 13, 2009. Study of the Surface Reactions in ALD Hafnium Aluminates http://link.aip.org/link/?JES/157/G7/1&agg=rss L. Nyns, A. Delabie, G. Pourtois, S. Van Elshocht, C. Vinckier et al.<br/> Hafnium aluminates have been investigated as high-kappa dielectrics for implementation in sub-45 nm nonvolatile memory technologies. The growth behavior and quality of these dielectrics strongly depend on the applied deposition technique. We examine the surface reactions that occur during the atomic ... [J. Electrochem. Soc. 157, G7 (2009)] published Tue Nov 3, 2009. Atomic Layer Deposition of Strontium Titanate Films Using Sr(BuCp) and Ti(OMe) http://link.aip.org/link/?JES/157/G1/1&agg=rss M. Popovici, S. Van Elshocht, N. Menou, J. Swerts, D. Pierreux et al.<br/> Strontium titanate (STO) is a promising candidate as a high-k dielectric for dynamic random access memory application. STO thin films are deposited by atomic layer deposition using Sr(BuCp), Ti(OMe), and HO as precursors. Growth and saturation behavior of STO and binary oxides are evaluated by ellip ... [J. Electrochem. Soc. 157, G1 (2009)] published Mon Nov 2, 2009.