Journal of Electrochemical Society: Electrochemical/Chemical Deposition and Etching - Current Issue

Materials Engineering for Future Interconnects: Catalyst-Free Electroless Cu Deposition on Self-Assembled Monolayer Alternative Barriers

S. Armini and A. Maestre Caro
An alternative bottom-up Cu electroless deposition (ELD) method without other catalyst material activation is the focus of this paper. The process consists of reducing the Cu ions in a solution via standard reducing agents such as dimethylamine borane. The reaction pH and ionic strength values can b ... [J. Electrochem. Soc. 157, D74 (2009)] published Thu Nov 19, 2009.

Anisotropic Deposition of Localized Electroless Nickel for Preferential Bridge Connection

Tokihiko Yokoshima, Yasuhiro Yamaji, Katsuya Kikuchi, Hiroshi Nakagawa, and Masahiro Aoyagi
Preferential bridge connection by localized electroless NiB deposition was investigated. The phenomenon of bridge formation by so-called extraneous deposition was utilized as a technique to perform the selective deposition of NiB on organic surfaces. The films used for bridging were preferentially d ... [J. Electrochem. Soc. 157, D65 (2009)] published Wed Nov 18, 2009.

Formation of Hexagonal Pyramids and Pits on V-/VI-Polar and III-/II-Polar GaN/ZnO Surfaces by Wet Etching

Seung-Cheol Han, Jae-Kwan Kim, Jun Young Kim, Kyoung-Kook Kim, H. Tampo et al.
The etching characteristics and evolution of the surface morphology of ZnO and GaN thin films during wet chemical etching were investigated. While the ZnO etch rates using acidic solutions were similar, regardless of etchant or polarity, the etch rate of the Ga-polar GaN surface was dependent on the ... [J. Electrochem. Soc. 157, D60 (2009)] published Mon Nov 16, 2009.

Ordering and Disordering of Macropores Formed in Prepatterned p-Type Silicon

Haruaki Okayama, Kazuhiro Fukami, Rodica Plugaru, Tetsuo Sakka, and Yukio H. Ogata
Macropore formation in prepatterned p-type silicon was conducted. Pre-etch pits with 4 x 4 and 1 x 1 [mu]m were prepared before anodization of silicon. Using the prepatterned silicon, the effect of applied current density on the ordering of macropores was investigated. The pattern size and the curr ... [J. Electrochem. Soc. 157, D54 (2009)] published Fri Nov 13, 2009.

Electrodeposition of NiP AlloyMultiwalled Carbon Nanotube Composite Films

Yosuke Suzuki, Susumu Arai, and Morinobu Endo
NiP alloymultiwalled carbon nanotube (MWCNT) composite films were fabricated by an electrodeposition technique, and their microstructure, hardness, and frictional properties were analyzed. NiP alloyMWCNT composite films containing 2022 atom % P and 0.71.2 mass % MWCNTs were electrodeposited from a c ... [J. Electrochem. Soc. 157, D50 (2009)] published Fri Nov 13, 2009.

Electroless Gold Plating on Aluminum Patterned Chips for CMOS-Based Sensor Applications

Jung Woo Ko, Hyo Chol Koo, Dong Wan Kim, Sung Min Seo, Tae June Kang et al.
We presented an approach for the activation of aluminum (Al) alloy using palladium (Pd) and the subsequent gold (Au) electroless plating (ELP) for complementary metal oxide semiconductor (CMOS)-based sensor applications. In this study, CMOS process compatible Al patterned chips were used as substrat ... [J. Electrochem. Soc. 157, D46 (2009)] published Fri Nov 13, 2009.

Thermal Stability of Acrylic/Methacrylic Sacrificial Copolymers Fabricated by Initiated Chemical Vapor Deposition

Gozde Ozaydin-Ince and Karen K. Gleason
The integration of air gaps in integrated circuits as low-k materials can be achieved by the incorporation of sacrificial materials. In this work, a detailed study of poly(ethylene glycol diacrylate-co-ethylene glycol dimethacrylate) [p(EGDA-co-EGDMA)] copolymer and poly(ethylene glycol diacrylate) ... [J. Electrochem. Soc. 157, D41 (2009)] published Tue Nov 10, 2009.

High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine

Kaupo Kukli, Mikko Ritala, Marianna Kemell, and Markku Leskela
Ruthenium thin films were grown by atomic layer deposition from N,N-dimethyl-1-ruthenocenylethylamine precursor. The growth was examined in the substrate temperature range of 325500 degrees C. The growth rate increased with the substrate temperature but was quite stable between 400 and 450 degrees C ... [J. Electrochem. Soc. 157, D35 (2009)] published Tue Nov 10, 2009.

Effect of Phosphorus and Carbon Incorporation in Amorphous Cobalt Films Prepared by Chemical Vapor Deposition

Lucas B. Henderson and John G. Ekerdt
Thin (~25 to 65 nm) films of amorphous cobaltphosphorus alloys are grown on SiO by chemical vapor deposition from dicobaltoctacarbonyl and trimethylphosphine at 250, 300, and 350 degrees C. Films incorporate C as an impurity, as both carbidic and graphitic C; Co and P, however, do not form phosphide ... [J. Electrochem. Soc. 157, D29 (2009)] published Tue Nov 10, 2009.

Infinite Etch Selectivity during Etching of SiON with an Extreme Ultraviolet Resist Pattern in Dual-Frequency Capacitively Coupled Plasmas

B. S. Kwon, J. S. Kim, N.-E. Lee, and S. K. Lee
We investigated the processing window for the etch selectivity of silicon oxynitride (SiON) layers to extreme ultraviolet (EUV) resists and the variation in line edge roughness of EUV resists during etching of SiON/EUV resist structures in a dual-frequency superimposed capacitively coupled plasma et ... [J. Electrochem. Soc. 157, D21 (2009)] published Tue Nov 10, 2009.

Structure, Electrical Properties, and Surface Reactivity of CVD-Made Functional Complex Oxides

Naoufal Bahlawane, Patrick Herve Tchoua Ngamou, and Katharina Kohse-Hoinghaus
The growth of pure-phase perovskites and spinels is reported using pulsed-spray evaporation chemical vapor deposition (CVD). Besides the near-bulk properties of 250 nm thick perovskites, an unusual surface confinement of charge transport was observed in ultrathin, <10 nm, polycrystalline LaCoO film ... [J. Electrochem. Soc. 157, D16 (2009)] published Tue Nov 3, 2009.

High Quality Area-Selective Atomic Layer Deposition Co Using Ammonia Gas as a Reactant

Han-Bo-Ram Lee, Woo-Hee Kim, Jeong Won Lee, Jae-Min Kim, Kwang Heo et al.
Atomic layer deposition (ALD) Co was developed using bis(N,N-diisopropylacetamidinato)cobalt(II) as a precursor and NH as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH, the Co films were also deposited by using H gas a ... [J. Electrochem. Soc. 157, D10 (2009)] published Tue Nov 3, 2009.

Electrochemical Fabrication of TiOAu Nanocomposites

J. Elhajj, M. N. Ismail, J. Warzywoda, A. Sacco, Jr., R. Kurtz et al.
Nanocomposites comprised of electrosynthesized/annealed TiO on indium tin oxide substrates, using the electrogeneration of base method, followed by electrodeposited gold clusters are presented, and their photoelectrochemical response is examined. The TiO films are nodular with a rough morphology. Go ... [J. Electrochem. Soc. 157, D5 (2009)] published Tue Nov 3, 2009.

Triangular GaAs Microcones and Sharp Tips Prepared by Combining Electroless and Electrochemical Etching

Xiaopeng Li, Han-Don Um, Jin-Young Jung, Hong-Seok Seo, and Jung-Ho Lee
We developed a method for making triangular GaAs microcones with sharp tips by combining electroless and electrochemical etching. Silver nanoparticles were first uniformly distributed by electroless plating and were subsequently used as catalysts for generating a uniform shallow textured surface dur ... [J. Electrochem. Soc. 157, D1 (2009)] published Mon Nov 2, 2009.