<?xml version="1.0" encoding="UTF-8"?>
<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns="http://purl.org/rss/1.0/" xmlns:taxo="http://purl.org/rss/1.0/modules/taxonomy/" xmlns:sy="http://purl.org/rss/1.0/modules/syndication/" xmlns:dc="http://purl.org/dc/elements/1.1/">
  <channel rdf:about="http://www.scitation.org/rss/JESOAN_R.xml">
    <title>Journal of Electrochemical Society: Reviews - Current Issue</title>
    <link>http://scitation.aip.org/</link>
    <description>Journal of Electrochemical Society: Reviews - Current Issue</description>
    <items>
      <rdf:Seq>
        <rdf:li resource="http://link.aip.org/link/?JES/153/K15/1&amp;agg=rss" />
      </rdf:Seq>
    </items>
  </channel>
  <item rdf:about="http://link.aip.org/link/?JES/153/K15/1&amp;agg=rss">
    <title>Hydrodynamics of Slurry Flow in Chemical Mechanical Polishing</title>
    <link>http://link.aip.org/link/?JES/153/K15/1&amp;agg=rss</link>
    <description>Elon J. Terrell and C. Fred Higgs, III&lt;br/&gt;  Chemical mechanical polishing (CMP) is a process that is commonly used to planarize wafer surfaces during fabrication. Although the complex interactions between the wafer, pad, and slurry make the CMP process difficult to predict, it has been postulated that the motion of the slurry fluid at the waf ... [J. Electrochem. Soc. 153, K15 (2006)] published Wed Apr 19, 2006.</description>
  </item>
</rdf:RDF>

