Journal of Electrochemical Society: Semiconductor Devices, Materials, and Processing - Current Issue

Co-doping Effect of Ca and N on the Structure and Properties of CuAlO Thin Film

Guobo Dong, Ming Zhang, Tingxian Li, and Hui Yan
Ca-doped CuAlO films were prepared by the radio-frequency magnetron sputtering technique. As shown by X-ray diffraction measurements, single-phase hexagonal CuAlCaO is formed for Ca concentrations up to 1.5 atom %. Hall measurements confirm the p-type conduction for all films. The introduction of Ca ... [J. Electrochem. Soc. 157, H127 (2009)] published Thu Nov 19, 2009.

Microstructural Effects during Chemical Mechanical Planarization of Copper

Patrick J. Andersen, Mariela N. Bentancur, Amy J. Moll, and Megan Frary
Die-stacking schema using through-wafer interconnects require vias to be filled with electroplated Cu, resulting in thick copper films and requiring an aggressive first-step chemical mechanical planarization (CMP). This work investigates the effects of microstructure on CMP of copper films, which ar ... [J. Electrochem. Soc. 157, H120 (2009)] published Wed Nov 18, 2009.

The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure

Po-Yi Kuo, Yan-Syue Huang, Yi-Hsien Lue, Tien-Sheng Chao, and Tan-Fu Lei
n- and p-channel poly-Si thin-film transistors with fully Ni-self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate structure (n- and p-channel FUSA-TFTs) have been successfully fabricated on a 40 nm thick channel layer. The conventional poly-Si gate is replaced by the fully Ni-sil ... [J. Electrochem. Soc. 157, H113 (2009)] published Fri Nov 13, 2009.

Effect of Free Radical Activation for Low Temperature Si to Si Wafer Bonding

K. Y. Byun, I. Ferain, and C. Colinge
In this study, a comparison of different surface treatments for direct Si to Si wafer bonding is reported. Hydrophilic and hydrophobic Si wafers have been exposed to a range of pretreatments, involving oxygen and nitrogen radical activation before in situ wafer bonding in vacuum. After low temperatu ... [J. Electrochem. Soc. 157, H109 (2009)] published Fri Nov 13, 2009.

Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator

Xiaobo Ma, Weili Liu, Xuyan Liu, Xiaofeng Du, Zhitang Song et al.
A low thermal budget process to fabricate strained Si metal-oxide-semiconductor field-effect transistors (MOSFETs) on a strain-relaxed silicongermanium-on-insulator (SGOI) by strain engineering is described. The strain stability in the top strained Si is studied after low temperature oxidation, ion ... [J. Electrochem. Soc. 157, H104 (2009)] published Fri Nov 13, 2009.

Organized Mesoporous TiO Films Stabilized by Phosphorus: Application for Dye-Sensitized Solar Cells

Marketa Zukalova, Jan Prochazka, Arnost Zukal, Jun Ho Yum, Ladislav Kavan et al.
A synthetic protocol was developed for the preparation of thin mesoporous TiO films with enhanced thermal stability. This objective was achieved by a modification of the procedure of supramolecular templating by a Pluronic P-123 copolymer by an addition of a small amount of phosphoric acid to the pr ... [J. Electrochem. Soc. 157, H99 (2009)] published Fri Nov 13, 2009.

Characterization of Nanometer-Scale Gap Formation

Donovan Lee, Helen Tran, and Tsu-Jae King Liu
The capability of forming nanometer-scale gaps (nanogaps) in a controllable manner is needed for the manufacture of future nanoelectronic devices. In this paper, a method for characterizing the formation of nanogaps by lateral etching of a sacrificial layer is presented. This method is used to study ... [J. Electrochem. Soc. 157, H94 (2009)] published Tue Nov 10, 2009.

Effects of Poor Solvent for Solution-Processing Passivation of Organic Field Effect Transistors

Sooji Nam, Dae Sung Chung, Jaeyoung Jang, Se Hyun Kim, Chanwoo Yang et al.
For the solution-processing passivation of organic field effect transistors (OFETs), the effects of the solvent on the structure and morphology of solution-processed semiconductors containing bulky triisopropylsilylethynyl groups were investigated by using X-ray diffraction and atomic force microsco ... [J. Electrochem. Soc. 157, H90 (2009)] published Tue Nov 10, 2009.

Green Light-Emitting Diodes on Semipolar {11[overline 2]2} Microfacets Grown by Selective Area Epitaxy

Chu-Young Cho, Sang-Heon Han, Sang-Jun Lee, Seung-Chul Park, and Seong-Ju Park
We report on the properties of green light-emitting diodes (LEDs) on semipolar {11[overline 2]2} microfacets grown by selective area epitaxy. The green LEDs were realized by growing InGaN/GaN multiple quantum wells (MQWs) on the semipolar {11[overline 2]2} side facets of triangular n-GaN arrays. Exc ... [J. Electrochem. Soc. 157, H86 (2009)] published Tue Nov 10, 2009.

Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer

Xing Wei, Aimin Wu, Xiang Wang, Xianyuan Li, Fei Ye et al.
In this paper, two approaches combining the separation by implanted oxygen layer transfer (SLT) process with Si epitaxy are proposed to fabricate a silicon-on-insulator (SOI) wafer. Spectroscopic ellipsometry indicates that SOI wafers with the top Si layers of 1491.4614.9 and 1476.4418.5 nm are obt ... [J. Electrochem. Soc. 157, H81 (2009)] published Tue Nov 10, 2009.

Silane Decomposition on Cu Interconnects Inhibited by Ammonia

E. Todd Ryan, Steven Molis, and Alfred Grill
The rate of copper silicidation by silane was studied in the presence of varying concentrations of ammonia. The presence of ammonia slowed the rate of silicidation, and the effect quickly saturated as the ammonia concentration was increased. Silane is conventionally used for the chemical vapor depos ... [J. Electrochem. Soc. 157, H78 (2009)] published Tue Nov 10, 2009.

Increase in the Adsorption Density of Anionic Molecules on Ceria for Defect-Free STI CMP

Ye-Hwan Kim, Sang-Kyun Kim, Jea-Gun Park, and Ungyu Paik
We have investigated the adsorption density of anionic molecules on a ceria surface and its effect on suppressing defects on the SiO films during shallow trench isolation (STI) chemical mechanical planarization (CMP). Intermolecular vacancies in poly(methyl methacrylate) (PMMA) caused by ionic repul ... [J. Electrochem. Soc. 157, H72 (2009)] published Tue Nov 10, 2009.

Fullerene and Pentacene as a Pure Organic Connecting Layer in Tandem Organic Light Emitting Devices

M. V. Madhava Rao, Tsung-Syun Huang, Yan-Kuin Su, and Yen-Tang Huang
A nondoped organic system of fullerene (C60)/pentacene was investigated as a connecting unit for green electroluminescent tandem organic light emitting devices with two identical emissive units consisting of (N,N-di(naphthalene-1-yl)-N,N-diphthalbenzidine)/tris(8-hydroxyquinoline aluminum) (Alq) tha ... [J. Electrochem. Soc. 157, H69 (2009)] published Tue Nov 3, 2009.

Orientation Dependence of Semiconductor Properties in Anatase TiO Polycrystalline Aggregates

Mamiko Kawakita, Jin Kawakita, Yoshio Sakka, and Tadashi Shinohara
We investigated the effects of the crystalline orientation of anatase titanium dioxide (TiO) polycrystalline fine aggregates on semiconductor properties such as flatband potential and donor density, which affect performance in applications to dye-sensitized solar cells and photocatalysis. Aggregates ... [J. Electrochem. Soc. 157, H65 (2009)] published Tue Nov 3, 2009.

Enhanced Performance of MOCVD ZnO TFTs on Glass Substrates with Nitrogen-Rich Silicon Nitride Gate Dielectric

K. Remashan, Y. S. Choi, S. J. Park, and J. H. Jang
Thin-film transistors (TFTs) on glass substrates were fabricated using ZnO, grown by a metallorganic chemical vapor deposition (MOCVD) technique, with N- and Si-rich silicon nitrides as gate dielectrics. This is a report on MOCVD-grown ZnO TFTs that use silicon nitride as gate dielectrics. The ZnO T ... [J. Electrochem. Soc. 157, H60 (2009)] published Tue Nov 3, 2009.

Electrophoretic Deposition of Flake-Shaped ZnO Nanoparticles

M. Verde, A. C. Caballero, Y. Iglesias, M. Villegas, and B. Ferrari
ZnO films have been grown on different substrates by using a variety of fabrication techniques. In the present work, we discuss the results on the preparation of ZnO films by electrophoretic deposition (EPD) starting from synthetic flake-shaped nanoparticles. The critical parameters related to the p ... [J. Electrochem. Soc. 157, H55 (2009)] published Tue Nov 3, 2009.

Optical Properties of Blue-Emitting CeSiAlON for White Light-Emitting Diodes

Lihong Liu, Rong-Jun Xie, Naoto Hirosaki, Takashi Takeda, Chen-ning Zhang et al.
In this work, blue-emitting CeSiAlON (0.3<=z<=2.5,0.5<=x<=2.5) phosphors were synthesized by firing powder mixtures of alpha-SiN, AlN, AlO, and CeO at 1950 degrees C for 2 h under 1.0 MPa N. The resultant phosphors were characterized by phase identification, diffuse reflectance spectra, photolumines ... [J. Electrochem. Soc. 157, H50 (2009)] published Tue Nov 3, 2009.

Photoluminescence Properties of Anodic Si Layers Formed in HF/Oxidant Electrolytes

Yan Kai Xu and Sadao Adachi
Anodic layers are formed on p-Si substrates by etching in a HF/MnO or a HF/I mixed solution. The scanning electron microscopy (SEM) image on the HF/MnO-formed layer reveals that the sample has a double-layered [highly resistive top/porous Si (PSi)-like bottom] structure, while the HF/I-formed surfac ... [J. Electrochem. Soc. 157, H44 (2009)] published Tue Nov 3, 2009.

Improved Poly Gate Engineering for 65 nm Low Power CMOS Technology

Chan-Yuan Hu, Jone F. Chen, Shih-Chih Chen, Shoou-Jinn Chang, Chih-Ping Lee et al.
A design for the polycrystalline gate is developed for 65 nm low power complementary metal oxide semiconductor (CMOS) technology. Using the poly deposition, a less poly depletion effect and a decrease in the electrical gate dielectric thickness (T) can be obtained. Also, the poly deposition success ... [J. Electrochem. Soc. 157, H38 (2009)] published Tue Nov 3, 2009.

A Numerical Study of Thermal and Electrical Effects in a Vertical LED Chip

Farn-Shiun Hwu, Jyh-Chen Chen, Sheng-Han Tu, Gwo-Jiun Sheu, Hsueh-I Chen et al.
The influence of the size of an n-electrode and a current blocking layer (CBL) on the thermal and electrical characteristics of a vertical-injection GaN-based light emitting diode (LED) chip is investigated by numerical simulation. The predicted forward voltages are quite consistent with previous ex ... [J. Electrochem. Soc. 157, H31 (2009)] published Tue Nov 3, 2009.

Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs

Guang-Li Luo, Zong-You Han, Chao-Hsin Chien, Chih-Hsin Ko, Clement H. Wann et al.
Ge films were epitaxially grown on GaAs(100) substrates and GaInAs(100) virtual substrates using an ultrahigh vacuum/chemical vapor deposition system. The incubation time of Ge growth depends on Ga(In)As surfaces that were processed by different wet chemical solutions. Growth behaviors, such as isla ... [J. Electrochem. Soc. 157, H27 (2009)] published Tue Nov 3, 2009.

Asymmetric Negative Bias Temperature Instability Degradation of Poly-Si TFTs under Static Stress

Chi-Feng Weng, Ting-Chang Chang, Fu-Yen Jian, Shih-Ching Chen, Jin Lu et al.
This work investigates the asymmetric negative bias temperature instability (NBTI) degradation of poly-Si thin film transistors (TFTs). Electric measurements of normal and reverse modes are employed to analyze degradation of threshold voltage, current, leakage current, and subthreshold swing. The re ... [J. Electrochem. Soc. 157, H22 (2009)] published Tue Nov 3, 2009.

High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning

R. Loo, G. Wang, L. Souriau, J. C. Lin, S. Takeuchi et al.
Further improving complementary metal oxide semiconductor performance beyond the 22 nm generation likely requires the use of high mobility channel materials, such as Ge for p-type metal oxide semiconductor (pMOS) and III/V for n-type metal oxide semiconductor devices. The complementary integration o ... [J. Electrochem. Soc. 157, H13 (2009)] published Mon Nov 2, 2009.

Effects of Postdeposition Annealing in Argon Ambient on Metallorganic Decomposed CeO Gate Spin Coated on Silicon

H. J. Quah, K. Y. Cheong, Z. Hassan, Z. Lockman, F. A. Jasni et al.
Cerium oxide (CeO) solution was prepared by cerium(III) acetylacetonate hydrate, methanol, and acetic acid as the starting materials via the metallorganic decomposition (MOD) method. Postdeposition annealing was performed onto the MOD-derived CeO films deposited onto n-type Si substrates at differen ... [J. Electrochem. Soc. 157, H6 (2009)] published Mon Nov 2, 2009.

Fabrication of a Uniform Low Temperature Poly-Si TFT Array by Optimized Field Aided Lateral Crystallization

Jae Hoon Jung, Kwang Jin Lee, Duck Kyun Choi, Ji Hoon Shin, Jung Sun You et al.
In this study, a 2 in. Ni field aided lateral crystallization (FALC) poly-Si thin-film transistor (TFT) (120 x 240) array was fabricated at the maximum process temperature of 500 degrees C using an optimized current density distribution design. We investigated the correlation between crystallization ... [J. Electrochem. Soc. 157, H1 (2009)] published Mon Nov 2, 2009.