Journal of Vacuum Science & Technology A http://scitation.aip.org/ Journal of Vacuum Science & Technology A Nanocrystalline cobalt-based films with high thermal stability from a single molecule http://link.aip.org/link/?JVA/28/54/1&agg=rss Lucas B. Henderson, Joseph H. Rivers, Daniel E. Bost, Richard A. Jones, and John G. Ekerdt<br/> Thin nanocrystalline hcp Co-based films are grown by chemical vapor deposition on SiO. Tetrakis(trimethylphosphine)cobalt(0), ((CH)P)Co, is a single-source precursor that forms Co films that incorporate both P and C when the substrate temperature ranges from 225 to 325 degrees C, and feature crysta ... [J. Vac. Sci. Technol. A 28, 54 (2009)] published Fri Nov 20, 2009. Influence of annealing and Ag doping on structural and optical properties of indium tin oxide thin films http://link.aip.org/link/?JVA/28/48/1&agg=rss Chun-Bin Cao, Lei Xiao, Xue-Ping Song, and Zhao-Qi Sun<br/> Indium tin oxide (ITO) and Ag (1.20.1 at. %)-ITO films with the thickness of 130 nm were deposited on glass substrates at room temperature by dc magnetron sputtering and postannealed at the temperature range of 200400 degrees C. By calculating the x-ray diffraction data, the lattice constants o ... [J. Vac. Sci. Technol. A 28, 48 (2009)] published Wed Nov 18, 2009. Flexible indium zinc oxide/Ag/indium zinc oxide multilayer electrode grown on polyethersulfone substrate by cost-efficient roll-to-roll sputtering for flexible organic photovoltaics http://link.aip.org/link/?JVA/28/41/1&agg=rss Yong-Seok Park and Han-Ki Kim<br/> The authors describe the preparation and characteristics of flexible indium zinc oxide (IZO)-Ag-IZO multilayer electrodes grown on flexible polyethersulfone (PES) substrates using a roll-to-roll sputtering system for use in flexible organic photovoltaics. By the continuous roll-to-roll sputtering of ... [J. Vac. Sci. Technol. A 28, 41 (2009)] published Mon Nov 16, 2009. Microstructure and temperature coefficient of resistance of thin cermet resistor films deposited from CrSiCrSiC targets by S-gun magnetron http://link.aip.org/link/?JVA/28/33/1&agg=rss Valery V. Felmetsger<br/> Technological solutions for producing nanoscale cermet resistor films with sheet resistances above 1000 Omega/[square, open] and low temperature coefficients of resistance (TCR) have been investigated. 240 nm thick cermet films were sputter deposited from CrSiCrSiC targets by a dual cathode dc S-g ... [J. Vac. Sci. Technol. A 28, 33 (2009)] published Mon Nov 16, 2009. Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma http://link.aip.org/link/?JVA/28/11/1&agg=rss Kwang-Ho Kwon, Alexander Efremov, Yong-Hyun Ham, Nam Ki Min, Hyun Woo Lee et al.<br/> The investigations of etch characteristics and mechanisms for indium tin oxide (InO):(SnO) (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), ... [J. Vac. Sci. Technol. A 28, 11 (2009)] published Fri Nov 13, 2009. In situ x-ray diffraction study of NiYb interlayer and alloy systems on Si(100) http://link.aip.org/link/?JVA/28/20/1&agg=rss W. Knaepen, J. Demeulemeester, J. Jordan-Sweet, A. Vantomme, C. Detavernier et al.<br/> The phase formation in the ternary Ni/Yb/Si system was studied for NiYb alloy and interlayer structures on Si(100) substrates using in situ x-ray diffraction measurements. Yb was treated as an alloying element in the NiSi system with Yb concentrations varying between 0 and 40 at. % of the Ni concent ... [J. Vac. Sci. Technol. A 28, 20 (2009)] published Fri Nov 13, 2009. Effect of methane addition on ultrananocrystalline diamond formation: Morphology changes and induced stress http://link.aip.org/link/?JVA/28/27/1&agg=rss S. C. Ramos, A. F. Azevedo, M. R. Baldan, and N. G. Ferreira<br/> The morphology and structure of ultrananocrystalline diamond grown on Si substrate by chemical vapor deposition are systematically studied by varying the methane concentration in the Ar/H/CH precursor mixture. The films, analyzed by field-emission-gun scanning electron microscopy (FEG-SEM), showed a ... [J. Vac. Sci. Technol. A 28, 27 (2009)] published Fri Nov 13, 2009. Study of NiMnGa phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO/Pb(Ti,Zr)O buffer http://link.aip.org/link/?JVA/28/6/1&agg=rss F. Figueiras, E. Rauwel, V. S. Amaral, N. Vyshatko, A. L. Kholkin et al.<br/> Film deposition of NiMnGa phaselike alloy by radio frequency (rf) magnetron sputtering was performed onto bare Si(100) substrates and LaNiO/Pb(Ti,Zr)O (LNO/PZT) ferroelectric buffer layer near room temperature. The prepared samples were characterized using conventional x-ray diffraction (XRD), super ... [J. Vac. Sci. Technol. A 28, 6 (2009)] published Fri Nov 13, 2009. Effects of Al doping and annealing on chemical states and band diagram of YO/Si gate stacks studied by photoemission and x-ray absorption spectroscopy http://link.aip.org/link/?JVA/28/16/1&agg=rss Satoshi Toyoda, Jun Okabayashi, Makoto Komatsu, Masaharu Oshima, Dong-Ick Lee et al.<br/> The authors have investigated the effects of Al doping and annealing on the photoemission spectra and thermal stability of YO/Si gate stacks by photoemission spectroscopy and x-ray absorption spectroscopy. They have found that the SiO components diffuse into the YO layer by annealing, resulting in t ... [J. Vac. Sci. Technol. A 28, 16 (2009)] published Fri Nov 13, 2009. Effects of dopant ion and Mn valence state in the LaAMnO (A=Sr,Ba) colossal magnetoresistance films http://link.aip.org/link/?JVA/28/1/1&agg=rss Sun Gyu Choi, Seok-Joo Wang, Hyung-Ho Park, MunPyo Hong, and Kwang-Ho Kwon<br/> The structural and electrical properties of Mn-based colossal magnetoresistance (CMR) thin films with controlled tolerance factor and Mn ion valance ratio were studied using crystal structure and chemical bonding character analyses. LaSrMnO, LaBaMnO, and LaBaMnO thin films with different contents of ... [J. Vac. Sci. Technol. A 28, 1 (2009)] published Fri Nov 13, 2009. Preferential growth of helium-doped Ti films deposited by magnetron sputtering http://link.aip.org/link/?JVA/27/1392/1&agg=rss Lei Zhang, L. Q. Shi, Z. J. He, B. Zhang, and L. B. Wang<br/> The authors present a study on the influence of the bias voltages on the preferred orientation and microstructure of helium-doped Ti films. The films were deposited in a vacuum chamber by both direct-current magnetron sputtering and electron-cyclotron-resonance plasma-aided magnetron sputtering (ECR ... [J. Vac. Sci. Technol. A 27, 1392 (2009)] published Thu Oct 29, 2009. Simulation of gas flow through tubes of finite length over the whole range of rarefaction for various pressure drop ratios http://link.aip.org/link/?JVA/27/1377/1&agg=rss S. Varoutis, D. Valougeorgis, and F. Sharipov<br/> The rarefied gas flow through circular tubes of finite length has been investigated computationally by the direct simulation Monte Carlo method. The reduced flow rate and the flow field have been calculated as functions of the gas rarefaction, the length-to-radius ratio, and the pressure ratio along ... [J. Vac. Sci. Technol. A 27, 1377 (2009)] published Thu Oct 29, 2009. Effects of type of reactor, crystallinity of SiC, and NF gas pressure on etching rate and smoothness of SiC surface using NF gas plasma http://link.aip.org/link/?JVA/27/1369/1&agg=rss A. Tasaka, H. Yamada, T. Nonoyama, T. Kanatani, Y. Kotaka et al.<br/> Polycrystalline beta-SiC and single-crystalline 4H-SiC surfaces were etched by reactive ion etching (RIE) using NF gas plasma. A smooth surface was obtained on the polycrystalline SiC after RIE at NF gas pressures of 2 and 10 Pa for 10 min, and neither spikes nor pillars were formed on it. On the ot ... [J. Vac. Sci. Technol. A 27, 1369 (2009)] published Thu Oct 29, 2009. Transmission electron microscopy specimen preparation perpendicular to the long axis of high aspect ratio features http://link.aip.org/link/?JVA/27/1352/1&agg=rss R. B. Irwin, A. Anciso, P. J. Jones, A. L. Glenn, B. L. Williams et al.<br/> A new variation of transmission electron microscopy (TEM) specimen preparation is introduced. By thinning a tall high aspect ratio structure perpendicular to the long dimension (i.e., from the side) rather than from perpendicular to the short dimension (either the top or the bottom), it is possible ... [J. Vac. Sci. Technol. A 27, 1352 (2009)] published Wed Oct 28, 2009. Analysis of carbon in SrTiO grown by hybrid molecular beam epitaxy http://link.aip.org/link/?JVA/27/1365/1&agg=rss Bharat Jalan, Joel Cagnon, Thomas E. Mates, and Susanne Stemmer<br/> Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium te ... [J. Vac. Sci. Technol. A 27, 1365 (2009)] published Wed Oct 28, 2009. Synthesis and hydrogen gas sensing properties of ZnO wirelike thin films http://link.aip.org/link/?JVA/27/1347/1&agg=rss Nguyen Le Hung, Eunseong Ahn, Seongyong Park, Hooncheol Jung, Hyojin Kim et al.<br/> The authors investigated the hydrogen gas sensing properties of the ZnO wirelike films synthesized by two consecutive steps: thermal oxidation of sputtered Zn metallic films in dry air. Structural characterization revealed that the authors synthesized polycrystalline wurtzite ZnO films of a wirelike ... [J. Vac. Sci. Technol. A 27, 1347 (2009)] published Wed Oct 28, 2009. Structure and properties of ZrN doped diamondlike carbon films prepared by pulsed bias arc ion plating http://link.aip.org/link/?JVA/27/1360/1&agg=rss H. K. Li, G. Q. Lin, and C. Dong<br/> ZrN doped diamondlike carbon composite films with different compositions were deposited on cemented carbide substrates at different nitrogen flow rates by pulsed bias arc ion plating. Scanning electron microscopy results show that the film surfaces were all uniform, smooth, and dense. X-ray photoele ... [J. Vac. Sci. Technol. A 27, 1360 (2009)] published Wed Oct 28, 2009. UV detection based on a ZnO/LiNbO layered surface acoustic wave oscillator circuit http://link.aip.org/link/?JVA/27/1343/1&agg=rss Ching-Liang Wei, Ying-Chung Chen, Jiun-Lin Fu, Kuo-Sheng Kao, Da-Long Cheng et al.<br/> This study elucidates the combination of an oscillator circuit with a high-frequency amplifier, a matching network, and a layered surface acoustic wave device for detecting ultraviolet (UV) light. The oscillator circuit shows an excellent performance with the resonance frequency of 109.34 MHz and p ... [J. Vac. Sci. Technol. A 27, 1343 (2009)] published Wed Oct 28, 2009. Ferroelectric polarization dependent interactions at PdLiNbO(0001) interfaces http://link.aip.org/link/?JVA/27/1337/1&agg=rss Mosha H. Zhao, Dawn A. Bonnell, and John M. Vohs<br/> A combination of Auger electron spectroscopy and temperature-programed desorption was used to characterize the growth and interaction of Pd films with positively and negatively terminated ferroelectric LiNbO(0001) surfaces. The growth mode of vapor-deposited Pd layers at 300 K was found to be depen ... [J. Vac. Sci. Technol. A 27, 1337 (2009)] published Thu Oct 22, 2009. Modeling of the angular dependence of plasma etching http://link.aip.org/link/?JVA/27/1326/1&agg=rss Wei Guo and Herbert H. Sawin<br/> An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl plasma was modeled as a combination of individual angular-dependent etching yields for ... [J. Vac. Sci. Technol. A 27, 1326 (2009)] published Thu Oct 22, 2009.