Journal of Vacuum Science & Technology A http://scitation.aip.org/ Journal of Vacuum Science & Technology A Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition http://link.aip.org/link/?JVA/30/020604/1&agg=rss Tonmoy Chakraborty and Eric T. Eisenbraun<br/> Plasma enhanced atomic layer deposition (PEALD)-grown mixed phase RuTaN films has been studied as a direct plate material for Cu electroplating within interconnects. It was seen that these liners behaved as excellent Cu diffusion barrier and could be scaled down to sub-5 nm thicknesses. High resolut ... [J. Vac. Sci. Technol. A 30, 020604 (2012)] published Fri Feb 10, 2012. Twin structures of epitaxial SnO films grown on a-cut sapphire by metalorganic chemical vapor deposition http://link.aip.org/link/?JVA/30/021503/1&agg=rss Zhen Zhu, Jin Ma, Caina Luan, Wei Mi, and Yu Lv<br/> SnO films have been grown on a-cut (11[overline 2]0) sapphire substrates by metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy were employed to characterize the epitaxial relationship and film structure. The films were (101) oriented with pure rutile struc ... [J. Vac. Sci. Technol. A 30, 021503 (2012)] published Wed Feb 8, 2012. Porous antimony-doped tin oxide cathodes formed by supercritical CO treatment at low temperature for silver electro-deposition http://link.aip.org/link/?JVA/30/020603/1&agg=rss W. C. Tien, A. K. Chu, H. Y. Wen, M. Y. Chang, and W. Y. Huang<br/> Porous antimony-doped tin oxide (ATO) cathodes for silver electrodeposition devices are proposed. The porous structure of the cathodes is obtained by applying supercritical CO (SCCO) treatment at 60 degrees C on spin-coated ATO nanoparticles. The morphological, structural, and electrical properties ... [J. Vac. Sci. Technol. A 30, 020603 (2012)] published Wed Feb 8, 2012. Commercialization of dye sensitized solar cells: Present status and future research needs to improve efficiency, stability, and manufacturing http://link.aip.org/link/?JVA/30/021201/1&agg=rss Jason B. Baxter<br/> Dye sensitized solar cells (DSSCs) have received a tremendous amount of attention since the first report of a 7% efficient cell in 1991. Confirmed record efficiencies are now 11.2% for small cells and 9.9% for submodules, and low-cost production methods are enabling manufacturing of DSSC products fo ... [J. Vac. Sci. Technol. A 30, 021201 (2012)] published Mon Feb 6, 2012. Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas http://link.aip.org/link/?JVA/30/021306/1&agg=rss Hyungjoo Shin, Weiye Zhu, Vincent M. Donnelly, and Demetre J. Economou<br/> The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorine-containing plasmas. This mechanism was discovered in mostly Ar plasmas with a few percent added Cl, but was found to be even more important in pure Cl plasmas. Nearly monoenergetic ion energy distribution ... [J. Vac. Sci. Technol. A 30, 021306 (2012)] published Mon Feb 6, 2012. Temperature dependence of the infrared absorption cross-sections of neutral species commonly found in fluorocarbon plasmas http://link.aip.org/link/?JVA/30/021305/1&agg=rss Caleb T. Nelson, Lawrence J. Overzet, and Matthew J. Goeckner<br/> This article serves as a reference for the analysis of Fourier transform infrared spectroscopy data from processing plasmas. Until now, there has been a lack of accurate reference data for addressing the problems of species identification and density measurements in cases of increasing gas temperatu ... [J. Vac. Sci. Technol. A 30, 021305 (2012)] published Wed Feb 1, 2012. SiCl/Cl plasmas: A new chemistry to etch high-k materials selectively to Si-based materials http://link.aip.org/link/?JVA/30/020602/1&agg=rss Paul Bodart, Gilles Cunge, Olivier Joubert, and Thorsten Lill<br/> Plasma etching of ultrathin layers of high-k materials is one critical step in the fabrication of gate transistors. The main challenge in this process is to achieve an infinite etching selectively between the high-k and the Si (or SiO covered silicon) substrate to prevent damaging the source and dra ... [J. Vac. Sci. Technol. A 30, 020602 (2012)] published Wed Feb 1, 2012. Abatement of CF and CHF byproducts using low-pressure plasmas generated by annular-shaped electrodes http://link.aip.org/link/?JVA/30/021304/1&agg=rss Min Hur, Jae O. K. Lee, Young Hoon Song, and Hoon A. Yoo<br/> Three different driving schemes are tested for a plasma reactor designed to abate the greenhouse gases emitted by the semiconductor industry. The reactor and electrodes all have a concentric annular shape, which allows them to be easily connected to pre-existing pipelines without any disturbance to ... [J. Vac. Sci. Technol. A 30, 021304 (2012)] published Wed Feb 1, 2012. Blueshift in sulfur treated GaAsP/AlGaAs near surface quantum well http://link.aip.org/link/?JVA/30/021401/1&agg=rss Suparna Pal, S. D. Singh, S. Porwal, S. W. D'Souza, S. R. Barman et al.<br/> Large blueshift was observed in a near-surface GaAsP/AlGaAs quantum well upon treatment with NaSxHO solution. Very slow etching with simultaneous surface passivation of the quantum well was obtained using this chemical treatment. Photoreflectance (PR) spectra exhibit maximum blueshift of 28 meV afte ... [J. Vac. Sci. Technol. A 30, 021401 (2012)] published Wed Feb 1, 2012. High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films http://link.aip.org/link/?JVA/30/021502/1&agg=rss Eric Dickey and William A. Barrow<br/> Atomic layer deposition has been shown to provide high quality single layer moisture barrier films on polymer substrates, but conventional pulse-based processes are too slow to be commercially feasible. One way to overcome this speed limitation is to avoid the need to pulse and purge precursors by m ... [J. Vac. Sci. Technol. A 30, 021502 (2012)] published Tue Jan 24, 2012. Novel light sputter ion pump with neodymium iron boron magnets and the low outgassing body http://link.aip.org/link/?JVA/30/020601/1&agg=rss Taekyun Ha, C. D. Park, and Sukmin Chung<br/> A light sputter ion pump for ultra high vacuum was fabricated using 5-mm-thick neodymium iron boron (NdFeB) magnets. The weight of the pump was reduced by 30%, compared with conventional sputter ion pumps using ferrite magnets. For the sake of uniformity of magnetic field, three pieces of magnet wer ... [J. Vac. Sci. Technol. A 30, 020601 (2012)] published Tue Jan 17, 2012. On the scaling of rf and dc self-bias voltages with pressure in electronegative capacitively coupled plasmas http://link.aip.org/link/?JVA/30/021303/1&agg=rss Ankur Agarwal, Leonid Dorf, Shahid Rauf, and Ken Collins<br/> Higher gas densities and lower diffusion losses at higher operating pressures typically lead to increased charged species densities (and hence flux) for a constant power deposition in capacitively coupled plasmas (CCP). As a result, one would expect that the bias radio-frequency (rf) voltage require ... [J. Vac. Sci. Technol. A 30, 021303 (2012)] published Thu Jan 12, 2012. In situ fabrication of blue ceramic coatings on wrought Al Alloy 2024 by plasma electrolytic oxidation http://link.aip.org/link/?JVA/30/021302/1&agg=rss Zhijiang Wang, Xueyuan Nie, Henry Hu, and Riyad O. Hussein<br/> In situ formation of ceramic coatings on 2024 Al alloy with a blue color was successfully achieved using a plasma electrolytic oxidation process working at atmospheric pressure. This novel blue ceramic coating overcomes the shortcomings of surface treatments resulting from conventional dyeing proces ... [J. Vac. Sci. Technol. A 30, 021302 (2012)] published Thu Jan 12, 2012. Fabrication and physical properties of thin TiO membranes from single crystal TiO http://link.aip.org/link/?JVA/30/021601/1&agg=rss Maryam Abazari, Jai S. Sim, B. Viswanath, and Shriram Ramanathan<br/> Utilizing focused ion beam (FIB) milling, we have fabricated thin membranes (also referred to as nanowalls) of TiO of 100300 nm thickness starting from rutile titania bulk single crystals. Low probe currents (~80 pA) in conjunction with XeF-assisted milling enables minimal contamination during the f ... [J. Vac. Sci. Technol. A 30, 021601 (2012)] published Wed Jan 11, 2012. Tribological behavior of Ti-Al-Si-C-N hard coatings deposited by hybrid arc-enhanced magnetron sputtering http://link.aip.org/link/?JVA/30/021501/1&agg=rss Guizhi Wu, Shengli Ma, Kewei Xu, and Paul K Chu<br/> Ti-Al-Si-C-N hard coatings are deposited on high speed steel by hybrid arc-enhanced magnetron sputtering, and the hardness, adhesion, and tribological behavior are studied. On account of the nanocomposite structure, the coatings possess hardness of more than 30 GPa. Failure of the coating during the ... [J. Vac. Sci. Technol. A 30, 021501 (2012)] published Wed Jan 11, 2012. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition http://link.aip.org/link/?JVA/30/01A161/1&agg=rss Jihwan An, Young Beom Kim, Joong Sun Park, Joon Hyung Shim, Turgut M. Gur et al.<br/> The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductiv ... [J. Vac. Sci. Technol. A 30, 01A161 (2012)] published Fri Jan 6, 2012. Mechanisms for hydrophilic/hydrophobic wetting transitions on cellulose cotton fibers coated using AlO atomic layer deposition http://link.aip.org/link/?JVA/30/01A163/1&agg=rss Kyoungmi Lee, Jesse S. Jur, Do Han Kim, and Gregory N. Parsons<br/> This report explores reactions that proceed during the first few cycles of inorganic film atomic layer deposition (ALD) on natural cellulose cotton fibers, and how surface reactions can explain the previously observed transitions in surface wetting upon ALD on cotton fibers. Atomic layer deposition ... [J. Vac. Sci. Technol. A 30, 01A163 (2012)] published Fri Jan 6, 2012. Atomic layer deposition of Ru onto organic monolayers: Shifting metal effective work function using monolayer structure http://link.aip.org/link/?JVA/30/01A162/1&agg=rss Kie Jin Park and Gregory N. Parsons<br/> Organic thin films are integrated with metal atomic layer deposition metallization to adjust and tune the electronic properties of metal/dielectric junctions. Specifically, 3-aminopropyltriethoxysilane (APTES) and undecenyltrichlorosilane (UDTS) self-assembled monolayers on hafnia-based dielectrics ... [J. Vac. Sci. Technol. A 30, 01A162 (2012)] published Fri Jan 6, 2012. Impact of CdSe/ZnS quantum dot spectrum converters on InGaP/GaAs/Ge multi-junction solar cells http://link.aip.org/link/?JVA/30/011201/1&agg=rss Chun-Yuan Huang<br/> Multijunction solar cells (MJSCs) with a quantum dot (QD) spectrum converter have been proposed and studied to boost the device performance. Our QD spectrum converter consisted of a thin double side-polished sapphire substrate coated with a blue-emitting (lambda = 480 nm) CdSe/ZnS core/shell QD laye ... [J. Vac. Sci. Technol. A 30, 011201 (2011)] published Wed Dec 28, 2011. Transparent polycrystalline monoclinic HfO dielectrics prepared by plasma assisted pulsed laser deposition http://link.aip.org/link/?JVA/30/011506/1&agg=rss Zhifeng Ying, Jian Sun, Zhigao Hu, Wenlei Yu, Ning Xu et al.<br/> The electrical properties of transparent polycrystalline monoclinic HfO dielectrics prepared by plasma assisted pulsed laser deposition were studied. The capacitance-voltage and leakage current-voltage characteristics of the capacitors incorporating HfO dielectrics were examined in terms of the stru ... [J. Vac. Sci. Technol. A 30, 011506 (2011)] published Wed Dec 28, 2011.