Journal of Vacuum Science & Technology B

Carbon nanotube pillar structures for human neural cell culture

Jin Woo Lee, Kyong Soo Lee, Byeong Kwon Ju, Hyun Jin Cho, Nae Sung Lee et al.
Human neuroblastoma cells were cultured and differentiated over patterned (dot, dash, and square pattern) pillar structures of multiwalled carbon nanotubes vertically grown on a SiO film-coated quartz substrate to observe cytoskeletal responses to the nanotube-based scaffold, especially filopodia ac ... [J. Vac. Sci. Technol. B 27, 2444 (2009)] published Thu Nov 19, 2009.

Protein patterning on the micro- and nanoscale by thermal nanoimprint lithography on a new functionalized copolymer

S. Merino, A. Retolaza, V. Trabadelo, A. Cruz, P. Heredia et al.
The localized depositions such as DNA or proteins at the micron or submicron scale on solids supports are a crucial step in the fabrication of advanced biochips and laboratory on chip devices. The present work shows a new approach: A new biofunctionalized copolymer based on 80% benzyl methacrylate a ... [J. Vac. Sci. Technol. B 27, 2439 (2009)] published Thu Nov 19, 2009.

Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask

Ding-Shin Wang, Jiun-Jie Chao, Shih-Che Hung, and Ching-Fuh Lin
Large-area GaAs nanowires are fabricated using SiO nanoparticles as the etching mask. SiO nanoparticle monolayer is spin coated on the GaAs substrate. To obtain a uniform monolayer of SiO nanoparticles across the substrate, raised temperature, adequate solution concentration, and the substrate treat ... [J. Vac. Sci. Technol. B 27, 2449 (2009)] published Thu Nov 19, 2009.

Emission site density depending on surface area and morphology of nanotube film emitters

Huarong Liu, Shigeki Kato, and Yahachi Saito
The influence of emitter surface morphology on emission site density (ESD) is investigated for carbon nanotube films. The authors show that the ESD varies with cathode-anode distance for rough surface emitters while it is almost invariant for smooth ones. In addition, it has been revealed that the E ... [J. Vac. Sci. Technol. B 27, 2435 (2009)] published Thu Nov 19, 2009.

Selective etching and polymer deposition on InP surface in reactive ion etching with a mixture of methane and hydrogen

Norio Yamamoto
In a reactive ion etching with a mixture of methane and hydrogen, the authors observed selectivity in an etched InP surface or polymeric surface in a wafer, on which SiO mask was patterned into a 2-[mu]m-wide grating, when the hydrogen flow rate was 5 SCCM (SCCM denotes cubic centimeter per minute ... [J. Vac. Sci. Technol. B 27, L50 (2009)] published Wed Nov 18, 2009.

Thermodynamically stable nanotips of AuMo alloy

K. Nomura, T. Nagao, B. L. Cho, H. Katsuda, T. Matsumura et al.
The authors propose a simple new method for fabricating stable nanotips using sharpened AuMo alloy tips. By annealing at 10001200 K in UHV, Au atoms segregate to the alloy surface to form a Au film of one physical monolayer thickness, resulting in formation of nanopyramids on the (111) surface. Alt ... [J. Vac. Sci. Technol. B 27, 2432 (2009)] published Wed Nov 18, 2009.

Alloy liquid metal ion source for carbon focused ion beams

P. Mazarov, A. D. Wieck, L. Bischoff, and W. Pilz
A carbon-cerium alloy liquid metal ion source (LMIS) with unintentional aluminum content is presented for generating focused ion beams of carbon ions, as well as ionized clusters with sizes of 2, 4, and 8 atoms. Emission-current-dependent measurements were carried out for the mass spectra and energy ... [J. Vac. Sci. Technol. B 27, L47 (2009)] published Wed Nov 18, 2009.

Concept and operation of Schottky emitter without suppressor electrode

A. K. Dokania and P. Kruit
The Schottky electron emitter is the most frequently used electron source in electron microscopes. A suppressor electrode around the emitter is usually employed to prevent emission from the shank of the cathode. A concept of operating the Schottky emitter without the suppressor electrode is proposed ... [J. Vac. Sci. Technol. B 27, 2426 (2009)] published Wed Nov 18, 2009.

190 nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole

K. H. Chen, Wenhsing Wu, Byung Hwan Chu, C. F. Lo, Jenshan Lin et al.
The authors have investigated the effect of the via hole diameter on the laser drilling rate of glass as well as the shape of the drilled via holes. An ArF based 193 nm UV excimer laser was used in this study. The via holes with a diameter of 120 [mu]m showed a 7.5 degrees 9 degrees angled, taper ... [J. Vac. Sci. Technol. B 27, L42 (2009)] published Wed Nov 18, 2009.

Improving field-emission uniformity of large-area WO nanowire films by electrical treatment

Z. L. Li, Fei Liu, N. S. Xu, Jun Chen, and S. Z. Deng
WO nanowires exhibit stable field emission at low fields. To explore the potential application of such nanowires in backlight and display devices, it is necessary to achieve uniform emission on a large area. In the present study, the authors demonstrate that field-emission uniformity of large-area s ... [J. Vac. Sci. Technol. B 27, 2420 (2009)] published Mon Nov 16, 2009.

Hyperthermal atomic hydrogen and oxygen etching of vertically oriented graphene sheets

M. Bagge-Hansen, R. A. Outlaw, M. Y. Zhu, H. J. Chen, and D. M. Manos
Carbon nanosheets have previously been shown to be promising high current field emission cathodes for a variety of potential applications. The vertically oriented planar sp carbon nanosheets grown by rf plasma-enhanced chemical vapor deposition terminate with one to seven graphene sheets and grow to ... [J. Vac. Sci. Technol. B 27, 2413 (2009)] published Mon Nov 16, 2009.

Simultaneous measurement of thermal conductivity and interface thermal conductance of diamond thin film

Byeonghee Lee, Joon Sik Lee, Sun Ung Kim, Kyeongtae Kim, Ohmyoung Kwon et al.
The authors developed an experimental method that can measure the in-plane thermal conductivity of a thin film and the interface thermal conductance between the film and the metal strip, simultaneously. This technique, the in-plane 3omega method, can be applied to the films with very high thermal co ... [J. Vac. Sci. Technol. B 27, 2408 (2009)] published Fri Nov 13, 2009.

Transport mechanism in aluminum nitride-metal multilayer junctions

A. Kabulski and D. Korakakis
The electrical behavior of aluminum nitride (AlN) thin film structures consisting of alternating AlN and platinum (Pt) layers has been studied. Typical single layer AlN thin films are insulating due to the wide bandgap properties of the material, but stacked AlNPt structures can be conductive. Condu ... [J. Vac. Sci. Technol. B 27, 2404 (2009)] published Fri Nov 13, 2009.

Influence of proton irradiation on the structure and stability of poly(dimethylsiloxane) and poly(dimethylsiloxane)-nanodiamond composite

V. Borjanovic, L. BistriCic, I. Vlasov, K. Furic, I. Zamboni et al.
In the present study, pure poly(dimethylsiloxane) (PDMS) polymer and PDMS-detonation nanodiamond (PDMS-DND) composite with 1 wt. % of DND were irradiated under vacuum at room temperature with a 2 MeV proton beam with fluences in the 1010 cm range. Modification of the structures and properties of ... [J. Vac. Sci. Technol. B 27, 2396 (2009)] published Tue Nov 10, 2009.

Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and AlO gate dielectric

Domingo I. Garcia-Gutierrez, Davood Shahrjerdi, Vidya Kaushik, and Sanjay K. Banerjee
The authors present experimental evidence on the impact of three different chemical surface treatments on the interface between the GaAs substrate and the aluminum oxide dielectric layer used in the fabrication of metal-oxide-semiconductor capacitors. The three different chemical surface treatments ... [J. Vac. Sci. Technol. B 27, 2390 (2009)] published Tue Nov 10, 2009.

Study of low temperature growth of III-V alloys for transparent layers

L. Wu, S. Iyer, J. Li, K. Gibson, J. Reppert et al.
The authors report on the successful growth of wide band gap III-V alloy systems on glass substrates at low growth temperatures that may be suitably exploited for the realization of novel high performance and stable optoelectronic devices. A systematic investigation on the growth of GaAs, GaAlAs(N), ... [J. Vac. Sci. Technol. B 27, 2375 (2009)] published Thu Nov 5, 2009.

Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

P. R. Fitzpatrick and J. G. Ekerdt
Metal insulator semiconductor structures were fabricated from n-Si(100) and n-Ge(100) wafers passivated with thin (4.55 nm) films of N-rich BCN (0.09<=x<=0.15, 0.38<=y<=0.52) and with atomic layer deposition HfO (10 nm) as the gate dielectric. C-V and I-V characteristics of devices with BCN films gr ... [J. Vac. Sci. Technol. B 27, 2366 (2009)] published Thu Nov 5, 2009.

Influence of sputtering a ZnMgO window layer on the interface and bulk properties of Cu(In,Ga)Se solar cells

Jian V. Li, Xiaonan Li, Yanfa Yan, Chun-Sheng Jiang, Wyatt K. Metzger et al.
The authors studied the influence of sputtering a ZnMgO window layer for Cu(In,Ga)Se solar cells on bulk and interface electrical properties. Admittance spectroscopy reveals deep levels at the ZnMgO/CdS interface whose activation energy (~0.4 eV) increases with reverse bias, indicating an unpinned ... [J. Vac. Sci. Technol. B 27, 2384 (2009)] published Thu Nov 5, 2009.

Selective dry etching of attenuated phase-shift mask materials for extreme ultraviolet lithography using inductively coupled plasmas

H. Y. Jung, Y. R. Park, H. J. Lee, N.-E. Lee, C. Y. Jeong et al.
Among the core extreme ultraviolet lithography (EUVL) technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration from that of conventional photolithography. This study investigated the etching properties of attenua ... [J. Vac. Sci. Technol. B 27, 2361 (2009)] published Thu Nov 5, 2009.

Measuring interface electrostatic potential and surface charge in a scanning electron microscope

I. Sychugov, Y. Nakayama, and K. Mitsuishi
A novel method for electrostatic potential measurements at the interface is described. It involves placing a two-dimensional grid below the sample and observing it in a scanning electron microscope. Primary electron beam displacement, caused by surface charges, can be then measured for every grid kn ... [J. Vac. Sci. Technol. B 27, 2357 (2009)] published Fri Oct 30, 2009.