Journal of Vacuum Science & Technology B http://scitation.aip.org/ Journal of Vacuum Science & Technology B Planar-localized surface plasmon resonance device by block-copolymer and nanoimprint lithography fabrication methods http://link.aip.org/link/?JVB/30/026801/1&agg=rss C. Y. Peter Yang, Elaine L. Yang, Chip A. Steinhaus, Chi-Chun Liu, Paul F. Nealey et al.<br/> The authors report on the integration of delocalized surface plasmon resonances (SPRs) and localized surface plasmon resonances (LSPRs) on a single device. The submicron SPR device was fabricated with nanoimprint lithography (NIL). Gold nanoparticles for LSPR generation were created and deposited vi ... [J. Vac. Sci. Technol. B 30, 026801 (2012)] published Wed Feb 8, 2012. Growth of GaNAsP alloys on GaP(100) by gas-source molecular beam epitaxy http://link.aip.org/link/?JVB/30/02B121/1&agg=rss Yan-Jin Kuang<!--orlang--> (&#x909D;&#x5F66;&#x747E;)<!--orlang-->, San-Wen Chen<!--orlang--> (&#x9673;&#x5C1A;&#x6587;)<!--orlang-->, Hua Li<!--orlang--> (&#x674E;&#x534E;)<!--orlang-->, Sunil K. Sinha, and Charles Wuching Tu<br/> The authors report epitaxial growth of dilute nitride GaNAsP on GaP(100) via a linearly graded GaAsP metamorphic buffer. The As content is in situ determined by group-V-induced reflection high energy electron diffraction intensity oscillation, while the N content is determined by x-ray diffraction. ... [J. Vac. Sci. Technol. B 30, 02B121 (2012)] published Wed Feb 8, 2012. Work function extraction of metal gates with alternate channel materials http://link.aip.org/link/?JVB/30/022202/1&agg=rss Mary Coan, Derek Johnson, Jung Hwan Woo, Nivedita Biswas, Veena Misra et al.<br/> The effects of a heterojunction on the effective work function in a metal/high kappa gate stack are studied and a new structure developed for the extraction of the work function. It is found that when a Ge/Si heterostructure on silicon is low doped and sufficiently thin, then the work function can b ... [J. Vac. Sci. Technol. B 30, 022202 (2012)] published Wed Feb 8, 2012. Simulation of the electron field emission characteristics of a flat panel x-ray source http://link.aip.org/link/?JVB/30/022201/1&agg=rss Chrystian M. Posada, Carlos H. Castano, Edwin J. Grant, and Hyoung K. Lee<br/> A distributed flat panel x ray source is designed as an alternative for medical and industrial imaging fields. The distributed x ray source corresponds to a two dimensional array of micro (93 [mu]m) x ray cells similar in format to a field emission display. In this paper the field electron emission ... [J. Vac. Sci. Technol. B 30, 022201 (2012)] published Mon Feb 6, 2012. Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy http://link.aip.org/link/?JVB/30/021601/1&agg=rss A. Al-Ajlony, A. Kanjilal, M. Catalfano, M. Fields, S. S. Harilal et al.<br/> Extreme ultraviolet (EUV) radiation mediated carbon contamination and oxidation of the Ru mirror surface, and the corresponding impact on reflectivity were studied. In particular, time-dependent systematic decrease in EUV reflectivity with a 13.5 nm wavelength of light in high vacuum atmosphere was ... [J. Vac. Sci. Technol. B 30, 021601 (2012)] published Wed Feb 1, 2012. Emission properties of carbon nanowalls on porous silicon http://link.aip.org/link/?JVB/30/021801/1&agg=rss Stanislav A. Evlashin, Yuri A. Mankelevich, Vladimir V. Borisov, Andrey A. Pilevskii, Anton S. Stepanov et al.<br/> For the past two decades various methods of carbon nanostructures growth have been proposed. Special substrate pretreatment methods are generally used to grow carbon nanowalls on silicon substrates and among them are mechanical and catalytic methods and ion bombardment in an rf discharge with bias. ... [J. Vac. Sci. Technol. B 30, 021801 (2012)] published Wed Feb 1, 2012. Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF and CF surface treatment http://link.aip.org/link/?JVB/30/021201/1&agg=rss C. H. Chen, C. W. Yang, H. C. Chiu, and Jeffrey. S. Fu<br/> In this study, enhancement-mode (E-mode) AlGaN/GaN HEMTs that underwent CHF and CF plasma treatment beneath the gate metal were fabricated. These treatments were applied because, although previous studies have formed AlF compound layers after fluorine-based plasma treatment to suppress the polarizat ... [J. Vac. Sci. Technol. B 30, 021201 (2012)] published Wed Feb 1, 2012. Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency http://link.aip.org/link/?JVB/30/02B119/1&agg=rss Wei Zhang, A. Yu. Nikiforov, C. Thomidis, J. Woodward, H. Sun et al.<br/> The authors report the development of high internal quantum efficiency AlN/AlGaN/AlN double heterostructures and AlGaN/AlN multiple quantum wells (MQWs) grown on 6H-SiC and 4H-SiC substrates of various miscuts by plasma-assisted molecular-beam epitaxy. The authors find that the luminescence spectra ... [J. Vac. Sci. Technol. B 30, 02B119 (2012)] published Wed Feb 1, 2012. Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth http://link.aip.org/link/?JVB/30/02B120/1&agg=rss David M. Tex and Itaru Kamiya<br/> Upconversion through excitation of bulk GaAs is investigated by change in crystal growth conditions with electron beam (e-beam). The upconverted photoluminescence intensity is enhanced several times by striking the source fluxes with e-beam during molecular beam epitaxy (MBE) growth. Experimental ev ... [J. Vac. Sci. Technol. B 30, 02B120 (2012)] published Wed Feb 1, 2012. InAs MOS devices passivated with molecular beam epitaxy-grown GdO dielectrics http://link.aip.org/link/?JVB/30/02B118/1&agg=rss C. A. Lin, M. L. Huang, P.-C. Chiu, H.-K. Lin, J.-I. Chyi et al.<br/> InAs MOS devices passivated with molecular beam epitaxy (MBE)-grown GdO 23 monolayers thick followed by an AlO cap have demonstrated excellent electrical performances and interfacial properties. Band offset energies of in situ atomic-layer-deposited (ALD)-AlO/MBE-GdO/InAs and ALD-AlO/InAs were deter ... [J. Vac. Sci. Technol. B 30, 02B118 (2012)] published Wed Feb 1, 2012. Molecular beam epitaxial growth and characterization of nitrogen delta-doped AlGaAs/GaAs quantum wells http://link.aip.org/link/?JVB/30/02B117/1&agg=rss Shin-ichiro Furuse, Kengo Sumiya, Masato Morifuji, and Fumitaro Ishikawa<br/> The authors carry out delta-doping at the middle of AlGaAs/GaAs quantum wells employing molecular beam epitaxy and varying the nitrogen coverage up to 0.5 monolayers. Transmission electron micrography and x ray diffraction indicate the introduction of a nitrogen delta-doped layer with precisely cont ... [J. Vac. Sci. Technol. B 30, 02B117 (2012)] published Wed Feb 1, 2012. Electrical properties of C and Si codoped GaAs layers http://link.aip.org/link/?JVB/30/02B116/1&agg=rss Jiro Nishinaga and Yoshiji Horikoshi<br/> C uniformly doped GaAs and C, Si codoped GaAs layers are grown by a migration enhanced epitaxy method. C doped GaAs layers show a single and sharp diffraction peak in x-ray diffraction and only an LO phonon peak is confirmed, indicating that the crystalline quality is fairly good. All of the C doped ... [J. Vac. Sci. Technol. B 30, 02B116 (2012)] published Tue Jan 24, 2012. Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE http://link.aip.org/link/?JVB/30/02B115/1&agg=rss K. Tivakornsasithorn, R. E. Pimpinella, V. Nguyen, X. Liu, M. Dobrowolska et al.<br/> GaAs/Fe/Au core-shell nanowires were grown on GaAs(111)B substrates by molecular beam epitaxy. Scanning electron microscopy images show that the Fe shell has successfully coated the sidewalls of GaAs nanowires. Magnetic anisotropy of GaAs/Fe core-shell nanowires was studied by ferromagnetic resonanc ... [J. Vac. Sci. Technol. B 30, 02B115 (2012)] published Tue Jan 24, 2012. Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers http://link.aip.org/link/?JVB/30/020601/1&agg=rss Joon-Woo Jeon, Woong-Sun Yum, Tae-Yeon Seong, Sang Youl Lee, and June-O Song<br/> The authors report on the formation of highly reliable Ti/Al-based ohmic contacts to N-face n-GaN for high-performance vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers. The Ti(Ga) solid solution layer is used to minimize the outdiffusion of Ga atoms from the n-GaN surface ... [J. Vac. Sci. Technol. B 30, 020601 (2012)] published Tue Jan 24, 2012. Multi-phase model for reflection anisotropy spectra of copper phthalocyanine films on anisotropic silicon substrates http://link.aip.org/link/?JVB/30/012401/1&agg=rss Falko Seidel, Li Ding, Ovidiu D. Gordan, and Dietrich R. T. Zahn<br/> Reflection anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) have extensively been applied to inorganic and organic structures and, because of the similarity of these two techniques, the evaluation procedure of RA spectra can be performed in a similar way as for SE. Especially for th ... [J. Vac. Sci. Technol. B 30, 012401 (2012)] published Mon Jan 23, 2012. Crystallization of Ge in SiO matrix by femtosecond laser processing http://link.aip.org/link/?JVB/30/011807/1&agg=rss Omer Salihoglu, Ula&#x015F; Kurum, Halime Gul Yaglioglu, Ayhan Elmali, and Atilla Aydinli<br/> Germanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Cr ... [J. Vac. Sci. Technol. B 30, 011807 (2012)] published Thu Jan 19, 2012. Growth of GaSbBi by molecular beam epitaxy http://link.aip.org/link/?JVB/30/02B114/1&agg=rss Yuxin Song<!--orlang--> (&#x5B8B;&#x79B9;&#x5FFB;)<!--orlang-->, Shumin Wang, Ivy Saha Roy, Peixiong Shi, and Anders Hallen<br/> Molecular beam epitaxy for GaSbBi is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concent ... [J. Vac. Sci. Technol. B 30, 02B114 (2012)] published Wed Jan 18, 2012. Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy http://link.aip.org/link/?JVB/30/02B113/1&agg=rss D. F. Storm, D. J. Meyer, D. S. Katzer, S. C. Binari, Tanya Paskova et al.<br/> The authors have investigated the growth and structural and electrical properties of homoepitaxial GaN layers and GaN/AlGaN heterostructures grown on free-standing, hydride vapor phase epitaxy grown, N-polar GaN:Fe substrates by rf-plasma molecular beam epitaxy. Secondary-ion mass spectroscopic anal ... [J. Vac. Sci. Technol. B 30, 02B113 (2012)] published Thu Jan 12, 2012. Roughness optimization of electron-beam exposed hydrogen silsesquioxane for immobilization of DNA origami http://link.aip.org/link/?JVB/30/011806/1&agg=rss Faisal A. Shah, Kyoung Nan Kim, Marya Lieberman, and Gary H. Bernstein<br/> A novel way to immobilize deoxyribonucleic acid (DNA) origami on a conventional substrate using hydrogen silsesquioxane (HSQ) as a functionalized platform is demonstrated. An alternative approach to quantifying roughness of the HSQ surfaces for 2D DNA origami immobilization is also introduced. Effec ... [J. Vac. Sci. Technol. B 30, 011806 (2012)] published Thu Jan 12, 2012. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors http://link.aip.org/link/?JVB/30/012202/1&agg=rss Hong-Yeol Kim, Jihyun Kim, Lu Liu, Chien-Fong Lo, Fan Ren et al.<br/> The authors report the proton energy dependence of the degradation of AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers from 5 to 15 MeV at a fixed dose of 5 x 10 cm. All the samples degraded after proton irradiation. However, higher damage in dc electrical properties was ob ... [J. Vac. Sci. Technol. B 30, 012202 (2012)] published Thu Jan 12, 2012.