APL: Electronic Transport and Semiconductors http://scitation.aip.org/ APL: Electronic Transport and Semiconductors Negative differential spin conductance in doped zigzag graphene nanoribbons http://link.aip.org/link/?APL/100/052112/1&agg=rss Ting-Ting Wu, Xue-Feng Wang, Ming-Xing Zhai, Hua Liu, Liping Zhou et al.<br/> The spin dependent charge transport in zigzag graphene nanoribbons (ZGNRs) has been investigated by the nonequilibrium Green's function method combined with the density functional theory at the local spin density approximation. The current versus voltage curve shows distinguished behaviors for symme ... [Appl. Phys. Lett. 100, 052112 (2012)] published Thu Feb 2, 2012. Electronic transport anisotropy of buckling graphene under uniaxial compressive strain: Ab initio study http://link.aip.org/link/?APL/100/052111/1&agg=rss Yang Xu, Haiyuan Gao, Huabin Chen, You Yuan, Kaicheng Zhu et al.<br/> Electronic transport properties of graphene under uniaxial compressive strain are studied using ab initio calculations. With approximate thermal perturbation, buckling occurs when strain exceeds a threshold, comparing to flat unperturbed structures. Transmissions of flat graphene compressed along zi ... [Appl. Phys. Lett. 100, 052111 (2012)] published Wed Feb 1, 2012. Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO/SrTiO-interfaces http://link.aip.org/link/?APL/100/052103/1&agg=rss F. Gunkel, P. Brinks, S. Hoffmann-Eifert, R. Dittmann, M. Huijben et al.<br/> The equilibrium conductance of LaAlO/SrTiO (LAO/STO)-heterointerfaces was investigated at high temperatures (950 K-1100 K) as a function of ambient oxygen partial pressure (pO). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O ... [Appl. Phys. Lett. 100, 052103 (2012)] published Mon Jan 30, 2012. Recoverable electrical transition in a single graphene sheet for application in nonvolatile memories http://link.aip.org/link/?APL/100/042105/1&agg=rss Chaoxing Wu, Fushan Li, Yongai Zhang, and Tailiang Guo<br/> The electrical properties of a resistive-switching memory based on a single graphene sheet suspended on a patterned indium-tin-oxide electrode pair were investigated. Current-voltage measurements on the planar device showed a large ON/OFF ratio (~10) and excellent retention ability in ambient condit ... [Appl. Phys. Lett. 100, 042105 (2012)] published Wed Jan 25, 2012. Ohmic contacts to n-type germanium with low specific contact resistivity http://link.aip.org/link/?APL/100/022113/1&agg=rss K. Gallacher, P. Velha, D. J. Paul, I. MacLaren, M. Myronov et al.<br/> A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 1.8) x 10 Omega-cm for anneal temperatures of 340 degrees C. The low contact resistivity is attributed to the low resistivity NiGe phase which was ... [Appl. Phys. Lett. 100, 022113 (2012)] published Fri Jan 13, 2012. Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes http://link.aip.org/link/?APL/100/022102/1&agg=rss Jie Sun<!--orlang--> (&#x5B59;&#x6377;)<!--orlang-->, Matthew T. Cole, Niclas Lindvall, Kenneth B. K. Teo<!--orlang--> (&#x5F20;&#x8C0B;&#x747E;)<!--orlang-->, and August Yurgens<br/> A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled th ... [Appl. Phys. Lett. 100, 022102 (2012)] published Mon Jan 9, 2012. Resonant carrier scattering by core-shell nanoparticles for thermoelectric power factor enhancement http://link.aip.org/link/?APL/100/012102/1&agg=rss Je-Hyeong Bahk, Parthiban Santhanam, Zhixi Bian, Rajeev Ram, and Ali Shakouri<br/> We theoretically investigate the use of energetically sharp resonances of core-shell nanoparticles embedded in semiconductors to selectively scatter carriers and thereby enhance the thermoelectric power factor and figure of merit. Appropriate selection of materials for the core-shell band structure ... [Appl. Phys. Lett. 100, 012102 (2012)] published Tue Jan 3, 2012. Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride http://link.aip.org/link/?APL/99/262106/1&agg=rss Erfan Baghani and Stephen K. O'Leary<br/> In the present work, we address the open question of the contribution from threading dislocations to the problem of unintentional n-type conductivity exhibited by indium nitride through an examination of the effect that positively charged dislocation lines have on the transverse electron mobility wi ... [Appl. Phys. Lett. 99, 262106 (2011)] published Fri Dec 30, 2011. Determination of secondary phases in kesterite CuZnSnS thin films by x-ray absorption near edge structure analysis http://link.aip.org/link/?APL/99/262105/1&agg=rss Justus Just, Dirk Lutzenkirchen-Hecht, Ronald Frahm, Susan Schorr, and Thomas Unold<br/> Secondary phases in CuZnSnS (CZTS) are investigated by x-ray absorption spectroscopy. Evaluating the x-ray absorption near edge structure at the sulfur K-edge, we show that secondary phases exhibit sufficiently distinct features to allow their quantitative determination with high accuracy. We are ab ... [Appl. Phys. Lett. 99, 262105 (2011)] published Thu Dec 29, 2011. Origin of charge separation in III-nitride nanowires under strain http://link.aip.org/link/?APL/99/262103/1&agg=rss Yelong Wu, Guangde Chen, Su-Huai Wei, Mowafak M. Al-Jassim, and Yanfa Yan<br/> The structural and electronic properties of BN, AlN, and GaN nanowires (NWs) under different strain condition are investigated using first-principles calculations. We found an anomaly of band gap change with respect to the applied external uniaxial strain. We show that this is due to the band crossi ... [Appl. Phys. Lett. 99, 262103 (2011)] published Wed Dec 28, 2011. GaSb nanowire single-hole transistor http://link.aip.org/link/?APL/99/262104/1&agg=rss Bahram Ganjipour, Henrik A. Nilsson, B. Mattias Borg, Lars-Erik Wernersson, Lars Samuelson et al.<br/> We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavi ... [Appl. Phys. Lett. 99, 262104 (2011)] published Wed Dec 28, 2011. Distribution of electronic reconstruction at the n-type LaAlO/SrTiO interface revealed by hard x-ray photoemission spectroscopy http://link.aip.org/link/?APL/99/262101/1&agg=rss Y. Y. Chu, Y. F. Liao, V. T. Tra, J. C. Yang, W. Z. Liu et al.<br/> We investigated the electronic reconstruction at the n-type LaAlO/SrTiO interface with hard x-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapse of evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidence angle, our HAXPES ... [Appl. Phys. Lett. 99, 262101 (2011)] published Tue Dec 27, 2011. Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile http://link.aip.org/link/?APL/99/262102/1&agg=rss Jiandong Fan, Frank Guell, Cristian Fabrega, Alexey Shavel, Alex Carrete et al.<br/> Arrays of vertically aligned ZnO:Cl/ZnO core-shell nanowires were used to demonstrate that the control of the coaxial doping profile in homojunction nanostructures can improve their surface charge carrier transfer while conserving potentially excellent transport properties. It is experimentally show ... [Appl. Phys. Lett. 99, 262102 (2011)] published Tue Dec 27, 2011. Domain wall conductivity in oxygen deficient multiferroic YMnO single crystals http://link.aip.org/link/?APL/99/252107/1&agg=rss Y. Du, X. L. Wang, D. P. Chen, S. X. Dou, Z. X. Cheng et al.<br/> The transport properties of domain walls in oxygen deficient multiferroic YMnO single crystals have been probed using conductive atomic force microscopy and piezoresponse force microscopy. Domain walls exhibit significantly enhanced conductance after being poled in electric fields, possibly induced ... [Appl. Phys. Lett. 99, 252107 (2011)] published Thu Dec 22, 2011. Persistent ion beam induced conductivity in zinc oxide nanowires http://link.aip.org/link/?APL/99/252105/1&agg=rss Andreas Johannes, Raphael Niepelt, Martin Gnauck, and Carsten Ronning<br/> We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitatio ... [Appl. Phys. Lett. 99, 252105 (2011)] published Wed Dec 21, 2011. Predictive circuit model for noise in quantum cascade detectors http://link.aip.org/link/?APL/99/252106/1&agg=rss A. Delga, M. Carras, L. Doyennette, V. Trinite, A. Nedelcu et al.<br/> Electronic noise in quantum cascade structures is investigated theoretically and experimentally under dark conditions. A model based on a unified and insightful vision of noise generating mechanisms is proposed and describes both thermal and shot noise behaviors. Dark measurements of quantum cascade ... [Appl. Phys. Lett. 99, 252106 (2011)] published Wed Dec 21, 2011. Impact of fixed charge on metal-insulator-semiconductor barrier height reduction http://link.aip.org/link/?APL/99/252104/1&agg=rss Jenny Hu, Aneesh Nainani, Yun Sun, Krishna C. Saraswat, and H.-S. Philip Wong<br/> Recently, the insertion of ultrathin insulators to form metal-insulator-semiconductor (MIS) contacts has been used extensively to reduce the Schottky barrier height and to shift the Fermi level pinning. In this paper, we investigate the physical non-idealities of the ultrathin insulator in Al/AlO/n- ... [Appl. Phys. Lett. 99, 252104 (2011)] published Tue Dec 20, 2011. Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment http://link.aip.org/link/?APL/99/252103/1&agg=rss Hyeri Jang, Jieun Lee, Jung Han Lee, Sungmin Seo, Byung-Gook Park et al.<br/> The hysteresis phenomenon has been widely observed in transfer characteristics of silicon nanowire (SiNW) biosensor devices in aqueous environment. Considering the experimental observation in the change of the liquid potential due to the charge flow through the oxide layer, we build up an electrical ... [Appl. Phys. Lett. 99, 252103 (2011)] published Tue Dec 20, 2011. Metal-oxide-oxide-metal granular tunnel diodes fabricated by anodization http://link.aip.org/link/?APL/99/252101/1&agg=rss Wenbin Fan, Melissa Commisso Dolph, Jiwei Lu, and Stuart A. Wolf<br/> A metal-oxide-oxide-metal (MO-OM) junction was fabricated based on anodized Al and Ta granular metal-oxide tunnel junctions. Electrical transport properties of the MO-OM junction were investigated at various temperatures. A strong asymmetric nonlinear current-voltage curve at room temperature indica ... [Appl. Phys. Lett. 99, 252101 (2011)] published Mon Dec 19, 2011. Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate http://link.aip.org/link/?APL/99/252102/1&agg=rss Kibog Park, Heung Seok Go, Youngeun Jeon, Jonathan P. Pelz, Xuan Zhang et al.<br/> Ballistic electron emission microscopy was used to measure the increase of local Schottky barrier (compared to the surrounding 4H-SiC area) over a partial 8H-SiC layer that is the surface-exposed tail of an 8H stacking fault inclusion extending from 4H substrate. This local increase is believed to b ... [Appl. Phys. Lett. 99, 252102 (2011)] published Mon Dec 19, 2011. Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations http://link.aip.org/link/?APL/99/242108/1&agg=rss A. Betti, G. Fiori, and G. Iannaccone<br/> We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F [approximate] 10 kV/cm. Depositi ... [Appl. Phys. Lett. 99, 242108 (2011)] published Wed Dec 14, 2011.