APL: Electronic Transport and Semiconductors http://scitation.aip.org/ APL: Electronic Transport and Semiconductors Electronic characteristics of the interfacial states embedded in buffer-free GaSb/GaAs (001) heterojunctions http://link.aip.org/link/?APL/95/202107/1&agg=rss A. Jallipalli, K. Nunna, M. N. Kutty, G. Balakrishnan, L. R. Dawson et al.<br/> We report a comprehensive study of the electronic properties and compensation of the interfacial states embedded in a majority carrier electron region either on one or both sides of the buffer-free GaSb/GaAs (001) heterointerface. An abrupt change observed in the forward-bias current (58 mA) for a s ... [Appl. Phys. Lett. 95, 202107 (2009)] published Fri Nov 20, 2009. Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy http://link.aip.org/link/?APL/95/202108/1&agg=rss T. Yokoyama, R. Takenaka, Y. Kamimura, K. Edagawa, and I. Yonenaga<br/> The local electrical resistivities in deformed n-GaP have been measured by scanning spreading resistance microscopy (SSRM). The SSRM images show chainlike alignments of spots with high resistivity along the slip direction. These spots can be attributed to carrier-depletion around a charged dislocati ... [Appl. Phys. Lett. 95, 202108 (2009)] published Fri Nov 20, 2009. On the interface state density at InGaAs/oxide interfaces http://link.aip.org/link/?APL/95/202109/1&agg=rss G. Brammertz, H.-C. Lin, M. Caymax, M. Meuris, M. Heyns et al.<br/> The authors model the capacitance-voltage (CV) behavior of InGaAs metal-oxide-semiconductor (MOS) structures and compare the results to experimental CV-curves. Due to the very low conduction band density of states, ideal III-V MOS structures should present an asymmetric CV behavior, with lower accum ... [Appl. Phys. Lett. 95, 202109 (2009)] published Fri Nov 20, 2009. Charge transport in polypyrrole:ZnO-nanowires composite films http://link.aip.org/link/?APL/95/202106/1&agg=rss A. Singh, Aditee Joshi, S. Samanta, A. K. Debnath, D. K. Aswal et al.<br/> Low temperature electrical transport properties of composite polypyrrole (PPy) films having ZnO-nanowires (ZnONWs) in the range of 050 wt. % have been investigated. It has been found that pure PPy film is in the critical regime of the metal-to-insulator transition, and adding ZnONWs drive composite ... [Appl. Phys. Lett. 95, 202106 (2009)] published Wed Nov 18, 2009. Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors http://link.aip.org/link/?APL/95/202101/1&agg=rss Sakulsuk Unarunotai, Yuya Murata, Cesar E. Chialvo, Hoon-sik Kim, Scott MacLaren et al.<br/> This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 degrees C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bi ... [Appl. Phys. Lett. 95, 202101 (2009)] published Mon Nov 16, 2009. Multichannel carbon nanotube field-effect transistors with compound channel layer http://link.aip.org/link/?APL/95/192110/1&agg=rss Changxin Chen, Wei Zhang, and Yafei Zhang<br/> A multichannel carbon nanotube field-effect transistor (MC-CNTFET) with compound channel layer has been built. In this MC-CNTFET, a dispersedly directed array of long single-walled carbon nanotubes (SWCNTs) is used as primary channel layer and a randomly aligned monolayer network of short SWCNTs act ... [Appl. Phys. Lett. 95, 192110 (2009)] published Fri Nov 13, 2009. Sulfur passivation of InN surface electron accumulation http://link.aip.org/link/?APL/95/192111/1&agg=rss L. R. Bailey, T. D. Veal, C. E. Kendrick, S. M. Durbin, and C. F. McConville<br/> The effects of treatment with ammonium sulfide ((NH)S) solution on the electronic properties of InN surfaces have been investigated with high resolution x-ray photoemission spectroscopy. The valence band, In 3d, and N 1s x-ray photoemission spectra show that the surface Fermi level decreases by appr ... [Appl. Phys. Lett. 95, 192111 (2009)] published Fri Nov 13, 2009. Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric http://link.aip.org/link/?APL/95/192113/1&agg=rss Hong Bae Park, Chang Seo Park, Chang Yong Kang, Seung-Chul Song, Byoung Hun Lee et al.<br/> Effects of Gd capping of HfSiON gate dielectric on the characteristics of n metal-oxide-semiconductor field effect transistor (nMOSFET) with TaC gate electrode were investigated. MOSFETs with an in situ deposited Gd/TaC bilayer demonstrated a reduced equivalent oxide thickness, 0.9 nm, and low V, 0. ... [Appl. Phys. Lett. 95, 192113 (2009)] published Fri Nov 13, 2009. Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide http://link.aip.org/link/?APL/95/192115/1&agg=rss Peter T. Erslev, Eric S. Sundholm, Rick E. Presley, David Hong, John F. Wager et al.<br/> Amorphous zinc tin oxide (ZTO) is a wide-band-gap (transparent) semiconductor which exhibits high electron mobilities irrespective of its disordered nature. Transient photocapacitance (TPC), drive level capacitance profiling (DLCP), and modulated photocurrent spectroscopy (MPC) were used to determin ... [Appl. Phys. Lett. 95, 192115 (2009)] published Fri Nov 13, 2009. g-factor and exchange energy in a few-electron lateral InGaAs quantum dot http://link.aip.org/link/?APL/95/192112/1&agg=rss M. Larsson, H. A. Nilsson, H. Hardtdegen, and H. Q. Xu<br/> We report on the measurements of the g-factor and the exchange interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel ... [Appl. Phys. Lett. 95, 192112 (2009)] published Fri Nov 13, 2009. Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons http://link.aip.org/link/?APL/95/192114/1&agg=rss Xiaoxi Ni, Gengchiau Liang, Jian-Sheng Wang, and Baowen Li<br/> We study the thermoelectric property of graphane strips by using density functional theory calculations combined with the nonequilibrium Green's function method. It is found that figure of merit (ZT) can be remarkably enhanced five times by randomly introducing hydrogen vacancies to the graphene nan ... [Appl. Phys. Lett. 95, 192114 (2009)] published Fri Nov 13, 2009. Fermi-level pinning at the interface between metals and nitrogen-doped GeSbTe examined by x-ray photoelectron spectroscopy http://link.aip.org/link/?APL/95/192109/1&agg=rss Lina Wei-Wei Fang, Rong Zhao, Jisheng Pan, Zheng Zhang, Luping Shi et al.<br/> The metal/alpha-GeSbTe interface was examined using x-ray photoelectron spectroscopy. Doping GeSbTe with nitrogen leads to an increase in hole barrier height at the interface between metals and nitrogen-doped GeSbTe. Hole barrier height at metal/alpha-GeSbTe interface is reduced slightly by increasi ... [Appl. Phys. Lett. 95, 192109 (2009)] published Thu Nov 12, 2009. Anisotropic electron spin relaxation in bulk GaN http://link.aip.org/link/?APL/95/192107/1&agg=rss J. H. Buss, J. Rudolph, F. Natali, F. Semond, and D. Hagele<br/> Electron spin dynamics in n-type c-oriented wurtzite GaN epilayers is studied by time-resolved Kerr-rotation measurements at T=80 K. The electron spin lifetime shows a sudden increase if an external magnetic field is applied in the sample plane. This enhancement is explained by anisotropic Dyakonov ... [Appl. Phys. Lett. 95, 192107 (2009)] published Wed Nov 11, 2009. CuCu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol http://link.aip.org/link/?APL/95/192108/1&agg=rss C. S. Tan, D. F. Lim, S. G. Singh, S. K. Goulet, and M. Bergkvist<br/> Self-assembled monolayer (SAM) of 1-hexanethiol is applied on copper (Cu) surface to retard surface oxidation during exposure in the ambient. This SAM layer can be desorbed effectively with an annealing step in inert N ambient to provide a clean Cu surface. Using this passivation method with SAM, wa ... [Appl. Phys. Lett. 95, 192108 (2009)] published Wed Nov 11, 2009. Highly efficient (CsV) superatom-based spin-polarizer http://link.aip.org/link/?APL/95/192104/1&agg=rss Haiying He, Ravindra Pandey, J. Ulises Reveles, Shiv N. Khanna, and Shashi P. Karna<br/> Quantum transport through molecules and the possibility to manipulate spin has generated tremendous excitement. Here, we demonstrate unusual spin transport through a molecule of two CsV magnetic superatoms. Calculations based on density functional theory and nonequilibrium Green's function methods f ... [Appl. Phys. Lett. 95, 192104 (2009)] published Tue Nov 10, 2009. Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO http://link.aip.org/link/?APL/95/192106/1&agg=rss Kun Tang, Shulin Gu, Shunming Zhu, Jiagao Liu, Hui Chen et al.<br/> In this letter, the authors performed a comprehensive study on suppression mechanism of compensation from nitrogen and carbon related complex defects in N-doped ZnO grown by metal-organic chemical vapor deposition. The chemical bonding information of donorlike substitutional complex defects, (NN) an ... [Appl. Phys. Lett. 95, 192106 (2009)] published Tue Nov 10, 2009. Undoped vacuum annealed InO thin films as a transparent conducting oxide http://link.aip.org/link/?APL/95/192105/1&agg=rss A. Dixit, C. Sudakar, R. Naik, V. M. Naik, and G. Lawes<br/> We have investigated the structural, optical, and electrical properties of both as-grown and vacuum annealed InO thin films. In contrast to the insulating as-prepared samples, vacuum annealed InO films exhibit a metallic electrical conductivity with increased carrier concentration and mobility. We a ... [Appl. Phys. Lett. 95, 192105 (2009)] published Tue Nov 10, 2009. Superconducting tunneling spectroscopy of a carbon nanotube quantum dot http://link.aip.org/link/?APL/95/192103/1&agg=rss Travis Dirks, Yung-Fu Chen, Norman O. Birge, and Nadya Mason<br/> We report results on superconducting tunneling spectroscopy of a carbon nanotube quantum dot. Using a three-probe technique that includes a superconducting tunnel probe, we map out changes in conductance due to band structure, excited states, and end-to-end bias. The superconducting probe allows us ... [Appl. Phys. Lett. 95, 192103 (2009)] published Tue Nov 10, 2009. Geometry dependent current-voltage characteristics of ZnO nanostructures: A combined nonequilibrium Green's function and density functional theory study http://link.aip.org/link/?APL/95/192101/1&agg=rss Zhiwen Yang, Bin Wen, Roderick Melnik, Shan Yao, and Tingju Li<br/> Current-voltage (I-V) characteristics of different ZnO nanostructures were studied using a combined nonequilibrium Green's function and density functional theory techniques with the two-probe model. It was found that I-V characteristics of ZnO nanostructures depend strongly on their geometry. For wu ... [Appl. Phys. Lett. 95, 192101 (2009)] published Mon Nov 9, 2009. Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels http://link.aip.org/link/?APL/95/192102/1&agg=rss A. Matulionis, J. Liberis, I. Matulioniene, M. Ramonas, E. Sermuksnis et al.<br/> Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly lattice-matched InAlN/AlN/GaN structures. A nonmonotonous dependence of the LO-phonon lifetime on the supplied electric power is reported for the ... [Appl. Phys. Lett. 95, 192102 (2009)] published Mon Nov 9, 2009. Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells http://link.aip.org/link/?APL/95/182109/1&agg=rss Hooyoung Song, Jin Soak Kim, Eun Kyu Kim, Sung-Ho Lee, and Sung-Min Hwang<br/> The external field dependence of barrier heights and the internal field dependence of luminescence properties in InGaN/GaN single quantum wells (SQWs) with polar (x=0.13) and nonpolar (x=0.15) orientations were investigated. The conduction band offset of a SQW was characterized by using deep level t ... [Appl. Phys. Lett. 95, 182109 (2009)] published Fri Nov 6, 2009.