APL: Dielectrics and Ferroelectricity http://scitation.aip.org/ APL: Dielectrics and Ferroelectricity Comparative study on aging effect in BiFeO thin films substituted at A- and B-sites http://link.aip.org/link/?APL/99/262901/1&agg=rss Xi Wang, Guangda Hu, Ling Cheng, Changhong Yang, and Weibing Wu<br/> Typical characteristics of aging effect, double hysteresis loops, were observed in (100)-oriented BiCaFeO (BCFO) and BiFeNiO (BFNO) films grown on LaNiO(100)/Si substrates. The double hysteresis loops for BCFO film become less constrained with increasing applied voltage compared to that for BFNO, in ... [Appl. Phys. Lett. 99, 262901 (2011)] published Tue Dec 27, 2011. Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr,Ti)O thin films http://link.aip.org/link/?APL/99/252904/1&agg=rss Minh D. Nguyen, Matthijn Dekkers, Evert Houwman, Ruud Steenwelle, Xin Wan et al.<br/> A study on the effects of the residual strain in Pb(ZrTi)O (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO electrodes. The thin film stacks are grown on different substrate-buffer-layer co ... [Appl. Phys. Lett. 99, 252904 (2011)] published Thu Dec 22, 2011. Ferroelectric and electrical characterization of multiferroic BiFeO at the single nanoparticle level http://link.aip.org/link/?APL/99/252905/1&agg=rss R. K. Vasudevan, K. A. Bogle, A. Kumar, S. Jesse, R. Magaraggia et al.<br/> Ferroelectric BiFeO (BFO) nanoparticles deposited on epitaxial substrates of SrRuO (SRO) and LaSrMnO (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroele ... [Appl. Phys. Lett. 99, 252905 (2011)] published Thu Dec 22, 2011. Electrical creep induced ferroelectric domain wall motion in BaTiO single crystal http://link.aip.org/link/?APL/99/252903/1&agg=rss Q. D. Liu and J. E. Huber<br/> Observations of 180 degrees domain patterns were made on a bulk BaTiO single crystal using atomic force microscopy and piezoresponse force microscopy (PFM). Surface electrodes were then used to apply a weak in-plane electric field, and in-situ measurements of electrical creep induced domain structu ... [Appl. Phys. Lett. 99, 252903 (2011)] published Wed Dec 21, 2011. In situ microwave characterization of microwire composites under mechanical stress http://link.aip.org/link/?APL/99/252902/1&agg=rss Faxiang Qin, C. Brosseau, and H. X. Peng<br/> We present results of an experimental characterization of the dielectric properties and microwave absorption of rubber composite samples containing FeCoNiBSiMo amorphous microwires which are submitted to a low uniaxial tension. Measurements of the dielectric loss and microwave absorption as a functi ... [Appl. Phys. Lett. 99, 252902 (2011)] published Tue Dec 20, 2011. Anomalous elastic behavior of relaxor ferroelectric CaBaNbO:Ce studied by resonant ultrasound spectroscopy http://link.aip.org/link/?APL/99/252901/1&agg=rss Chandra Shekhar Pandey, Jurgen Schreuer, Manfred Burianek, and Manfred Muhlberg<br/> Elastic behavior of tetragonal tungsten bronze uniaxial relaxor ferroelectric cerium doped CaBaNbO single crystal was investigated employing resonant ultrasound spectroscopy in the temperature range from room temperature up to 1323 K. Doping of cerium lowers the phase transition temperature T and Bu ... [Appl. Phys. Lett. 99, 252901 (2011)] published Mon Dec 19, 2011. (Electro)mechanical behavior of selectively solvated diblock/triblock copolymer blends http://link.aip.org/link/?APL/99/242901/1&agg=rss Pruthesh H. Vargantwar, Sarah M. Brelander, Arjun S. Krishnan, Tushar K. Ghosh, and Richard J. Spontak<br/> Thermoplastic elastomeric triblock copolymers swollen with a midblock-selective solvent form a highly elastic physical network that can exhibit remarkable electromechanical properties (high actuation strains and electromechanical efficiency with low hysteresis upon cycling) as dielectric elastomers. ... [Appl. Phys. Lett. 99, 242901 (2011)] published Mon Dec 12, 2011. Defects control for improved electrical properties in (BaSr)(ZrTi)O films by Co acceptor doping http://link.aip.org/link/?APL/99/232910/1&agg=rss Jun Miao, Khian Hooi Chew, and Yong Jiang<br/> (BaSr)(ZrTi)O (BSZT) films were grown on LaSrCoO buffered (001) SrTiO substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improvement in the electrica ... [Appl. Phys. Lett. 99, 232910 (2011)] published Thu Dec 8, 2011. Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal http://link.aip.org/link/?APL/99/232909/1&agg=rss W. H. Liu, K. L. Pey, X. Wu, N. Raghavan, A. Padovani et al.<br/> The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO based MOSFETs. After the SET operation, MOSFETs exhibit a threshold voltage (V) shift that is found to be closely related to the formation of conductive ... [Appl. Phys. Lett. 99, 232909 (2011)] published Thu Dec 8, 2011. Decoupling electrocaloric effect from Joule heating in a solid state cooling device http://link.aip.org/link/?APL/99/232908/1&agg=rss M. Quintero, L. Ghivelder, F. Gomez-Marlasca, and F. Parisi<br/> We report a heat dynamics analysis of the electrocaloric effect (ECE) in commercial multilayer capacitors based on BaTiO dielectric, a promising candidate for applications as a solid state cooling device. Direct measurements of the time evolution of the sample's temperature changes under different a ... [Appl. Phys. Lett. 99, 232908 (2011)] published Wed Dec 7, 2011. Influence of lattice parameters on the dielectric constant of tetragonal ZrO and La-doped ZrO crystals in thin films deposited by atomic layer deposition on Ge(001) http://link.aip.org/link/?APL/99/232907/1&agg=rss C. Wiemer, A. Debernardi, A. Lamperti, A. Molle, O. Salicio et al.<br/> In ZrO crystals, the highest dielectric constant (k) is ascribed to the tetragonal phase. By the use of density functional theory and synchrotron radiation x-ray diffraction, we show how the a and c lattice parameters of the tetragonal phase influence the resulting k. Highest k values are obtained a ... [Appl. Phys. Lett. 99, 232907 (2011)] published Wed Dec 7, 2011. Antiferroelectricferroelectric phase boundary enhances polarization extension in rhombohedral Pb(Zr,Ti)O http://link.aip.org/link/?APL/99/232906/1&agg=rss Anirban Ghosh and Dragan Damjanovic<br/> The main mechanism of properties enhancement in the morphotropic phase boundary region separating tetragonal and rhombohedral phases of Pb(ZrTi)O (PZT) is related to polarization rotation. It is shown here that in proximity of the morphotropic phase boundary separating antiferroelectric and rhombohe ... [Appl. Phys. Lett. 99, 232906 (2011)] published Wed Dec 7, 2011. Study of slow oxide trap creating random telegraph noise within a gate edge overlap region in inversion mode http://link.aip.org/link/?APL/99/232904/1&agg=rss Heung-Jae Cho, Younghwan Son, Seunghyun Jang, and Hyungcheol Shin<br/> We investigated a slow oxide trap causing a random telegraph noise (RTN) within a gate edge overlap region in an inversion mode at metal/high-k dielectric nMOSFETs. The oxide trap was observed to generate RTN only in gate leakage current (I RTN) without in drain current (I RTN) in the inversion mode ... [Appl. Phys. Lett. 99, 232904 (2011)] published Tue Dec 6, 2011. X-ray nanodiffraction of tilted domains in a poled epitaxial BiFeO thin film http://link.aip.org/link/?APL/99/232903/1&agg=rss S. O. Hruszkewycz, C. M. Folkman, M. J. Highland, M. V. Holt, S. H. Baek et al.<br/> We present measurements of crystallographic domain tilts in a (001) BiFeO thin film using focused beam x-ray nanodiffraction. Films were ferroelectrically pre-poled with an electric field orthogonal and parallel to as-grown tilt domain stripes. The tilt domains, associated with higher energy (010) v ... [Appl. Phys. Lett. 99, 232903 (2011)] published Tue Dec 6, 2011. Suppression of vacancy defects in epitaxial La-doped SrTiO films http://link.aip.org/link/?APL/99/232905/1&agg=rss D. J. Keeble, B. Jalan, L. Ravelli, W. Egger, G. Kanda et al.<br/> Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the per ... [Appl. Phys. Lett. 99, 232905 (2011)] published Tue Dec 6, 2011. Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices http://link.aip.org/link/?APL/99/232902/1&agg=rss Jaesoo Ahn, Irina Geppert, Marika Gunji, Martin Holland, Iain Thayne et al.<br/> We describe the electrical properties of atomic layer deposited TiO/AlO bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO film contributes to a significant accumulation capacitance incre ... [Appl. Phys. Lett. 99, 232902 (2011)] published Mon Dec 5, 2011. Piezoresponse force microscopy of domains and walls in multiferroic HoMnO http://link.aip.org/link/?APL/99/232901/1&agg=rss Edward B. Lochocki, S. Park, Nara Lee, S.-W. Cheong, and Weida Wu<br/> We report ambient piezoresponse force microscopy (PFM) studies of the multiferroic hexagonal manganite HoMnO performed on the cleaved (110) surface of a single-crystal specimen. By changing the sample orientation with respect to the cantilever, we observed an unexpected out-of-plane PFM signal at do ... [Appl. Phys. Lett. 99, 232901 (2011)] published Mon Dec 5, 2011. Bonding principles of passivation mechanism at III-V-oxide interfaces http://link.aip.org/link/?APL/99/222906/1&agg=rss J. Robertson and L. Lin<br/> We analyze the conditions necessary to passivate interfacial defects at III-V-oxide interfaces, in terms of an electron-counting rule. We propose that this rule, previously used to describe reconstructions at GaAs or ZnSe surfaces, acts during oxide growth or deposition, atomic layer by atomic layer ... [Appl. Phys. Lett. 99, 222906 (2011)] published Wed Nov 30, 2011. Interface composition of InAs nanowires with AlO and HfO thin films http://link.aip.org/link/?APL/99/222907/1&agg=rss R. Timm, M. Hjort, A. Fian, B. M. Borg, C. Thelander et al.<br/> Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick AlO and HfO films. The n ... [Appl. Phys. Lett. 99, 222907 (2011)] published Wed Nov 30, 2011. Influence of strain on the electronic structure of the TbMnO/SrTiO epitaxial interface http://link.aip.org/link/?APL/99/222902/1&agg=rss S. Venkatesan, M. Doblinger, C. Daumont, B. Kooi, B. Noheda et al.<br/> Understanding the magnetotransport properties of epitaxial strained thin films requires knowledge of the chemistry at the interface. We report on the change in Mn electronic structure at the epitaxially strained TbMnO/SrTiO interface. Scanning transmission electron microscopy shows an abrupt interfa ... [Appl. Phys. Lett. 99, 222902 (2011)] published Tue Nov 29, 2011. Suppression of dielectric crystallization on metal by introduction of SiO layer for metal floating gate memory blocking oxide http://link.aip.org/link/?APL/99/222903/1&agg=rss Srikant Jayanti and Veena Misra<br/> A technique of reducing the higher degree of dielectric crystallization on polycrystalline metal has been investigated by inserting a thin SiO layer interfacing the metal for application as high-k blocking oxide in metal floating gate FLASH memories. Grazing incidence x-ray diffraction study showed ... [Appl. Phys. Lett. 99, 222903 (2011)] published Tue Nov 29, 2011.