APL: Device Physics http://scitation.aip.org/ APL: Device Physics High efficiency planar Si/organic heterojunction hybrid solar cells http://link.aip.org/link/?APL/100/073503/1&agg=rss Lining He, Changyun Jiang, Hao Wang, Donny Lai, and Rusli<br/> We present an efficient hybrid solar cell based on poly (3,4-ethylene-dioxythiophene):polystyrenesulfonate and planar Si with (100) and (111) orientations. The effect of Si surface native oxide on cell performance is studied. Compared to cell with hydrogen-terminated Si surface, the cell with oxygen ... [Appl. Phys. Lett. 100, 073503 (2012)] published Mon Feb 13, 2012. ON-OFF switching mechanism of resistiverandomaccessmemories based on the formation and disruption of oxygen vacancy conducting channels http://link.aip.org/link/?APL/100/073502/1&agg=rss Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park, Blanka Magyari-Kope, Yoshio Nishi et al.<br/> We study the ON-OFF switching mechanism of oxide-based resistiverandomaccessmemories using theoretical calculations. Electron deficient vacancies (V) up to 1+ charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V configurations with 2+ charg ... [Appl. Phys. Lett. 100, 073502 (2012)] published Mon Feb 13, 2012. Drawing graphene nanoribbons on SiC by ion implantation http://link.aip.org/link/?APL/100/073501/1&agg=rss S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila et al.<br/> We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 degrees C below the graphitization temperature (T) of SiC. ... [Appl. Phys. Lett. 100, 073501 (2012)] published Mon Feb 13, 2012. The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories http://link.aip.org/link/?APL/100/063509/1&agg=rss Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu et al.<br/> Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile resistive switching memory based on GO was fabricated through a spin-coating process. The speed of the SET and RESET operations of the GO memories was ... [Appl. Phys. Lett. 100, 063509 (2012)] published Fri Feb 10, 2012. Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures http://link.aip.org/link/?APL/100/063511/1&agg=rss Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Vito Raineri, Graziella Malandrino et al.<br/> This letter reports on epitaxial nickel oxide (NiO) films grown by metal-organic chemichal vapor deposition on AlGaN/GaN heterostructures. The grown material was epitaxial, free from voids and exhibited a permittivity of 11.7, close to bulk NiO. This approach is advantageous with respect other metho ... [Appl. Phys. Lett. 100, 063511 (2012)] published Fri Feb 10, 2012. Suppression of microwave rectification effects in electrically detected magnetic resonance measurements http://link.aip.org/link/?APL/100/063510/1&agg=rss C. C. Lo, F. R. Bradbury, A. M. Tyryshkin, C. D. Weis, J. Bokor et al.<br/> Spin-dependent transport properties of micro- and nano-scale electronic devices are commonly studied by electrically detected magnetic resonance (EDMR). However, the applied microwave fields in EDMR experiments can induce large rectification effects and result in perturbations of the device bias con ... [Appl. Phys. Lett. 100, 063510 (2012)] published Fri Feb 10, 2012. Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory http://link.aip.org/link/?APL/100/063508/1&agg=rss Dae-Hwan Kang, Nan Young Kim, Hongsik Jeong, and Byung-ki Cheong<br/> We experimentally demonstrate that the crystallization process of Ge-Sb-Te crystallites during the set operation in non-volatile phase change memory commences after threshold switching event. It is also shown that the nucleation and growth rates have opposite behaviors with the increase of set opera ... [Appl. Phys. Lett. 100, 063508 (2012)] published Thu Feb 9, 2012. High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures http://link.aip.org/link/?APL/100/063506/1&agg=rss S.-L. Wang, J.-W. Yu, P.-C. Yeh, H.-W. Kuo, L.-H. Peng et al.<br/> We investigate the transport properties of thin-film transistors using indium oxide (InO)/gallium oxide (GaO) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to [mu] = 51.3 cm/Vs and ON/OFF current ratio t ... [Appl. Phys. Lett. 100, 063506 (2012)] published Thu Feb 9, 2012. Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization http://link.aip.org/link/?APL/100/063507/1&agg=rss Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, and Siddharth Rajan<br/> We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 56 nm of vertical channe ... [Appl. Phys. Lett. 100, 063507 (2012)] published Thu Feb 9, 2012. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first InGaAs metal-oxide-semiconductor field-effect-transistors http://link.aip.org/link/?APL/100/063505/1&agg=rss M. El Kazzi, L. Czornomaz, C. Rossel, C. Gerl, D. Caimi et al.<br/> Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO/1 nm AlO/1 nm a-Si gate stacks on p-InGaAs/InP (001) substrates. Thanks to the presence of the AlO barrier layer, a minimum amount of the a-Si passivating layer is oxidized during the whole fabrication proces ... [Appl. Phys. Lett. 100, 063505 (2012)] published Wed Feb 8, 2012. Deformable transparent all-carbon-nanotube transistors http://link.aip.org/link/?APL/100/063502/1&agg=rss Shinya Aikawa, Erik Einarsson, Theerapol Thurakitseree, Shohei Chiashi, Eiichi Nishikawa et al.<br/> We fabricated polymer-laminated, transparent, all-carbon-nanotube field-effect transistors (CNT-FETs), making use of the flexible yet robust nature of single-walled carbon nanotubes (SWNTs). All components of the FET (active channel, electrodes, dielectric layer, and substrate) consist of carbon-bas ... [Appl. Phys. Lett. 100, 063502 (2012)] published Tue Feb 7, 2012. Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing http://link.aip.org/link/?APL/100/063504/1&agg=rss Woo-Suhl Cho, Mathieu Luisier, Dheeraj Mohata, Suman Datta, David Pawlik et al.<br/> A homo-junction InGaAs tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the non-equilibrium Green's function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model [S. ... [Appl. Phys. Lett. 100, 063504 (2012)] published Tue Feb 7, 2012. Superconducting low-inductance undulatory galvanometer microwave amplifier http://link.aip.org/link/?APL/100/063503/1&agg=rss D. Hover, Y.-F. Chen, G. J. Ribeill, S. Zhu, S. Sendelbach et al.<br/> We describe a microwave amplifier based on the superconducting low-inductance undulatory galvanometer (SLUG). The SLUG is embedded in a microstrip resonator, and the signal current is injected directly into the device loop. Measurements at 30 mK show gains of 25 dB at 3 GHz and 15 dB at 9 GHz. Ampli ... [Appl. Phys. Lett. 100, 063503 (2012)] published Tue Feb 7, 2012. Spontaneous induction of the uniform lying helix alignment in bimesogenic liquid crystals for the flexoelectro-optic effect http://link.aip.org/link/?APL/100/063501/1&agg=rss Damian J. Gardiner, Stephen M. Morris, Philip J. W. Hands, Flynn Castles, Malik M. Qasim et al.<br/> Using in-plane electric fields, the electrical induction of the uniform lying helix (ULH) alignment in chiral nematic liquid crystals is reported. This process permits spontaneous induction of the ULH alignment to give an in-plane optic axis, without the need for complex processing. Flexoelectro-opt ... [Appl. Phys. Lett. 100, 063501 (2012)] published Mon Feb 6, 2012. Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots http://link.aip.org/link/?APL/100/053507/1&agg=rss A. I. Yakimov, A. A. Bloshkin, V. A. Timofeev, A. I. Nikiforov, and A. V. Dvurechenskii<br/> Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500 degrees C are overgrown with Si at different temperatures T, and their mid-infrared photoresponse is investigated. The photocurrent maximum shifts from 2.3 to 3.9 [mu]m with increasing T from 300 to 750 degrees C. The best performance ... [Appl. Phys. Lett. 100, 053507 (2012)] published Fri Feb 3, 2012. Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates http://link.aip.org/link/?APL/100/053505/1&agg=rss Saeed Esmaili-Sardari, Andrew Berkovich, and Agis A. Iliadis<br/> We report a conductivity type conversion of ZnO films from n to p-type for films grown on silicon (100) substrates by pulsed laser deposition under low constant oxygen overpressure. Conductivity conversion is attributed to a competition between donor and acceptor-like native defects correlating with ... [Appl. Phys. Lett. 100, 053505 (2012)] published Thu Feb 2, 2012. Field-effect devices utilizing LaAlO-SrTiO interfaces http://link.aip.org/link/?APL/100/053506/1&agg=rss B. Forg, C. Richter, and J. Mannhart<br/> Using LaAlO-SrTiO bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' n-type interfaces as drain-source channels and the LaAlO layers as gate dielectrics. With gate voltages well below 1 V, the devices are characterized by vol ... [Appl. Phys. Lett. 100, 053506 (2012)] published Thu Feb 2, 2012. Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes http://link.aip.org/link/?APL/100/053504/1&agg=rss Ning Zhang, Zhe Liu, Tongbo Wei, Lian Zhang, Xuecheng Wei et al.<br/> We report on the effect of a graded AlGaN electron blocking layer (GEBL) on the emission properties of InGaN/GaN multiple quantum wells light-emitting diode (LED). The adoption of GEBL in the LED enhances the electroluminescence intensity and reduces the wavelength blue-shift with increasing injecti ... [Appl. Phys. Lett. 100, 053504 (2012)] published Wed Feb 1, 2012. Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding http://link.aip.org/link/?APL/100/053503/1&agg=rss J. J. Ke, K. T. Tsai, Y. A. Dai, and J. H. He<br/> The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 x 10 Omega-cm has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing ... [Appl. Phys. Lett. 100, 053503 (2012)] published Tue Jan 31, 2012. Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber http://link.aip.org/link/?APL/100/053502/1&agg=rss Y. Feng, P. Aliberti, B. P. Veettil, R. Patterson, S. Shrestha et al.<br/> The hot carrier solar cell is a third generation photovoltaic device that extracts photo-generated carriers before they thermalise. In this work, the efficiency of a hot carrier solar cell with a 50 nm indium nitride (InN) absorber layer has been calculated, taking into account the realistic transpo ... [Appl. Phys. Lett. 100, 053502 (2012)] published Mon Jan 30, 2012. Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability http://link.aip.org/link/?APL/100/053501/1&agg=rss J. H. Yum, G. Bersuker, J. Oh, and S. K. Banerjee<br/> The effectiveness of an atomic layer deposited beryllium oxide (BeO) barrier layer has been investigated through physical and electrical analysis as a way to control the interfacial layer on Si and III-V substrates recently. In this paper, a theoretical model is suggested to find the most promising ... [Appl. Phys. Lett. 100, 053501 (2012)] published Mon Jan 30, 2012.