http://scitation.aip.org/ Applied Physics Reviews http://link.aip.org/link/?APR/2012/1/1&agg=rss Peter Fisher and Steven Ahlen<br/> We comment on an omission from the above mentioned article. ... [J. Appl. Phys. 111, 016104 (2012)] published Thu Jan 19, 2012. http://link.aip.org/link/?APR/2011/17/1&agg=rss T. Fujita, M. B. A. Jalil, S. G. Tan, and S. Murakami<br/> We present an overview of gauge fields in spintronics, focusing on their origin and physical consequences. Important topics, such as the Berry gauge field associated with adiabatic quantum evolution as well as gauge fields arising from other non-adiabatic considerations, are discussed. We examine th ... [J. Appl. Phys. 110, 121301 (2011)] published Fri Dec 30, 2011. http://link.aip.org/link/?APR/2011/16/1&agg=rss Johannes Svensson and Eleanor E. B. Campbell<br/> Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effect transistors such as high mobility, good electrostatics due to their small diameter allowing for aggressive gate length scaling and capability to withstand high current densities. However, in spite o ... [J. Appl. Phys. 110, 111101 (2011)] published Fri Dec 9, 2011. http://link.aip.org/link/?APR/2011/15/1&agg=rss M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M. L. W. Thewalt et al.<br/> Deep luminescence centers in Si associated with transition metals have been studied for decades, both as markers for these deleterious contaminants, as well as for the possibility of efficient Si-based light emission. They are among the most ubiquitous luminescence centers observed in Si, and have s ... [J. Appl. Phys. 110, 081301 (2011)] published Mon Oct 31, 2011. http://link.aip.org/link/?APR/2011/14/1&agg=rss Sieu D. Ha and Shriram Ramanathan<br/> Novel information processing techniques are being actively explored to overcome fundamental limitations associated with CMOS scaling. A new paradigm of adaptive electronic devices is emerging that may reshape the frontiers of electronics and enable new modalities. Creating systems that can learn and ... [J. Appl. Phys. 110, 071101 (2011)] published Wed Oct 5, 2011. http://link.aip.org/link/?APR/2011/13/1&agg=rss I. Balberg<br/> In this review, we try to derive a comprehensive understanding of the transport mechanisms in three dimensional ensembles of Si quantum dots (QDs) that are embedded in an insulating matrix. This understanding is based on our systematic electrical measurements as a function of the density of Si nanoc ... [J. Appl. Phys. 110, 061301 (2011)] published Thu Sep 29, 2011. http://link.aip.org/link/?APR/2011/11/1&agg=rss Antonio Luque<br/> Solar energy is the most abundant and reliable source of energy we have to provide for the multi-terawatt challenge we are facing. Although huge, this resource is relatively dispersed. High conversion efficiency is probably necessary for cost effectiveness. Solar cell efficiencies above 40% have bee ... [J. Appl. Phys. 110, 031301 (2011)] published Mon Aug 8, 2011. http://link.aip.org/link/?APR/2011/10/1&agg=rss Farzan A. Ghavanini, Peter Enoksson, Stefan Bengtsson, and Per Lundgren<br/> This paper gives an assessment of vertically aligned carbon based varactors and validates their potential for future applications. The varactors discussed here are nanoelectromechanical devices which are based on either vertically aligned carbon nanofibers or vertically aligned carbon nanotube array ... [J. Appl. Phys. 110, 021101 (2011)] published Tue Jul 26, 2011. http://link.aip.org/link/?APR/2011/9/1&agg=rss Nick K. Hon, Richard Soref, and Bahram Jalali<br/> Using a combination of semiconductor theory and experimental results from the scientific literature, we have compiled and plotted the key third-order nonlinear optical coefficients of bulk crystalline Si and Ge as a function of wavelength (1.56.7 [mu]m for Si and 214.7 [mu]m for Ge). The real part o ... [J. Appl. Phys. 110, 011301 (2011)] published Fri Jul 15, 2011. http://link.aip.org/link/?APR/2011/8/1&agg=rss Leonard J. Brillson and Yicheng Lu<br/> ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO i ... [J. Appl. Phys. 109, 121301 (2011)] published Thu Jun 23, 2011. http://link.aip.org/link/?APR/2011/7/1&agg=rss B. A. Kemp<br/> A century has now passed since the origins of the Abraham-Minkowski controversy pertaining to the correct form of optical momentum in media. Experiment and theory have been applied at both the classical and quantum levels in attempt to resolve the debate. The result of these efforts is the identific ... [J. Appl. Phys. 109, 111101 (2011)] published Wed Jun 1, 2011. http://link.aip.org/link/?APR/2011/6/1&agg=rss Simeon Katz, Augustinas Vizbaras, Ralf Meyer, and Markus-Christian Amann<br/> This review focuses on recent progress on injectorless quantum cascade lasers, an increasingly attractive approach in comparison to the classical injectorbased concepts. This particularly holds for the wavelength range between 7 and 12 [mu]m, where fundamental vibrational modes of many important mol ... [J. Appl. Phys. 109, 081101 (2011)] published Tue May 17, 2011.