http://scitation.aip.org/ JAP: Electronic Structure and Transport http://link.aip.org/link/?JAP/111/033711/1&agg=rss E. V. Anda, G. Chiappe, and E. Louis<br/> We analyze a system constituted by two single level quantum dots embedded in a metallic ring connected to external electrodes. The energy levels of the dots are controlled by an external gate potential. Additionally, the external electrodes are under the effect of an external applied potential. In t ... [J. Appl. Phys. 111, 033711 (2012)] published Mon Feb 13, 2012. http://link.aip.org/link/?JAP/111/033709/1&agg=rss P. Esquinazi, J. Barzola-Quiquia, S. Dusari, and N. Garcia<br/> Using a linear array of voltage electrodes with a separation of several micrometers on a 20 nm thick and 30 [mu]m long multigraphene sample, we show that the measured resistance does not follow the usual length dependence according to Ohm's law. The deviations can be quantitatively explained taking ... [J. Appl. Phys. 111, 033709 (2012)] published Thu Feb 9, 2012. http://link.aip.org/link/?JAP/111/033710/1&agg=rss Robert Edgington, Syunsuke Sato, Yuichiro Ishiyama, Richard Morris, Richard B. Jackman et al.<br/> A plasma enhanced chemical vapor deposition protocol for the growth of delta-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated delta-layers and desirable sheet carrier densiti ... [J. Appl. Phys. 111, 033710 (2012)] published Thu Feb 9, 2012. http://link.aip.org/link/?JAP/111/033708/1&agg=rss Andrew F. May, Michael A. McGuire, Jie Ma, Olivier Delaire, Ashfia Huq et al.<br/> Single crystals of CaZnSb, EuZnSb, and YbZnSb were grown from melts of nominal composition AZnSb (A = Ca,Eu,Yb) with the excess melt being removed at 1073 K. The electrical transport properties are consistent with those previously reported for polycrystalline samples. This confirms that the p-type c ... [J. Appl. Phys. 111, 033708 (2012)] published Wed Feb 8, 2012. http://link.aip.org/link/?JAP/111/033707/1&agg=rss Yu Guodong, Lu Xiaoling, Zheng Yisong, and Tian Wenjing<br/> Electronic and magnetic properties of zigzag-edged graphene nanoribbons (ZGNR) embedded with titanium (Ti) atoms are studied by means of the first principle calculations. When Ti atoms are positioned near either edge of the ZGNR, the magnetic moment at this edge is rapidly suppressed as the Ti conce ... [J. Appl. Phys. 111, 033707 (2012)] published Tue Feb 7, 2012. http://link.aip.org/link/?JAP/111/033706/1&agg=rss Hai-Yao Deng<br/> We discuss graphene physics that are associated with Fermi velocity rather than bandgap or external potential. Such physics are illustrated with a simple junction that is comprised of two uniform electrodes bridged by a central uniform channel. The main difference between these components is suppose ... [J. Appl. Phys. 111, 033706 (2012)] published Tue Feb 7, 2012. http://link.aip.org/link/?JAP/111/033704/1&agg=rss Jia-pei Zhu and Gao-xiang Li<br/> A scheme for ground-state cooling of a mechanical resonator by single- and two-phonon processes is analyzed. The mechanical resonator is coupled to two coupled quantum dots forming an effective Lambda-type three-level structure and connected with two normal metal leads. The quantum dots are driven b ... [J. Appl. Phys. 111, 033704 (2012)] published Mon Feb 6, 2012. http://link.aip.org/link/?JAP/111/033705/1&agg=rss Ying-Tao Zhang and Feng Zhai<br/> We investigate spin polarization and valley-dependent transport in bulk graphene in the presence of the exchange splitting field, the pseudo magnetic field, and Rashba spin-orbit coupling (SOC). It is demonstrated that Rashba SOC and the pseudo magnetic field cannot produce a spin polarization compo ... [J. Appl. Phys. 111, 033705 (2012)] published Mon Feb 6, 2012. http://link.aip.org/link/?JAP/111/033702/1&agg=rss Yohan Yoon, Bijaya Paudyal, Jinwoo Kim, Young-Woo Ok, Prashant Kulshreshtha et al.<br/> The injection-dependent lifetimes of different levels of Ni-contaminated n-type Czochralski (CZ) silicon wafers were investigated using resonant-coupled photoconductance decay (RCPCD) and quasi-steady-state photoconductance technique (QSSPC). The lifetime degradation of the most heavily contaminated ... [J. Appl. Phys. 111, 033702 (2012)] published Thu Feb 2, 2012. http://link.aip.org/link/?JAP/111/033703/1&agg=rss F. Wang, T. Zou, Y. Liu, L.-Q. Yan, and Y. Sun<br/> We present a systematic study to clarify the origin of nonlinear I-V characteristics widely observed in charge ordered oxides. The experiments performed on the charge ordered YbFeO single crystals demonstrate that the I-V behavior strongly depends on the measurement parameters, such as the width and ... [J. Appl. Phys. 111, 033703 (2012)] published Thu Feb 2, 2012. http://link.aip.org/link/?JAP/111/033701/1&agg=rss X. H. Yang<br/> The electron densities of states in semiconductors of n-doped ZnTeF and p-doped ZnTeN are calculated with the first principles based on density functional theory. The F and N atoms induce steep density of states (DOSs) in conduction and valence band edges, respectively, owing to the high electronega ... [J. Appl. Phys. 111, 033701 (2012)] published Thu Feb 2, 2012. http://link.aip.org/link/?JAP/111/023716/1&agg=rss X. G. Wu and X. H. Zhang<br/> Electronic states in symmetric InSb/AlInSb quantum wells are studied theoretically. An eight-band kp calculation is performed for quantum wells with different barrier heights and well widths in the presence of a magnetic field applied perpendicularly to the quantum well. Influences due to strain and ... [J. Appl. Phys. 111, 023716 (2012)] published Tue Jan 31, 2012. http://link.aip.org/link/?JAP/111/023715/1&agg=rss R. M. Fleming, C. H. Seager, D. V. Lang, and J. M. Campbell<br/> The positions of the electronic levels of an intrinsic bistable defect have been measured using deep level transient spectroscopy (DLTS) in n- and p-type damaged silicon bipolar transistor diodes after minority carrier injection and thermal annealing. The kinetic rates observed during conversion of ... [J. Appl. Phys. 111, 023715 (2012)] published Tue Jan 31, 2012. http://link.aip.org/link/?JAP/111/023714/1&agg=rss A. Chroneos and A. Dimoulas<br/> At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium substrate. Here we employ density functional theory calculations to investigate the interaction of a range of such cations (Al, Y, Zr, Nb, La, and Hf) with intrinsic defects and oxygen in germanium. It is ... [J. Appl. Phys. 111, 023714 (2012)] published Fri Jan 27, 2012. http://link.aip.org/link/?JAP/111/023713/1&agg=rss Mehmet &#x015E;ahin, Sedat Nizamoglu, Ozan Yerli, and Hilmi Volkan Demir<br/> Based on self-consistent computational modeling of quantum dot-quantum well (QDQW) heteronanocrystals, we propose and demonstrate that conduction-electron and valence-hole orbitals can be reordered by controlling shell thicknesses, unlike widely known core/shell quantum dots (QDs). Multi-shell nanoc ... [J. Appl. Phys. 111, 023713 (2012)] published Fri Jan 27, 2012. http://link.aip.org/link/?JAP/111/023712/1&agg=rss B. Fisher, J. Genossar, L. Patlagan, and G. M. Reisner<br/> We report on linear and nonlinear electronic transport in the LaCaMnO system (0 <= v <= 0.06), that exhibits a disorder driven metal-insulator (M-I) transition. This transition is compared with the compositionally induced M-I transition in the LaCaMnO system (0.17 <= x <= 0.22). Nonlinear conductivi ... [J. Appl. Phys. 111, 023712 (2012)] published Thu Jan 26, 2012. http://link.aip.org/link/?JAP/111/023711/1&agg=rss E. Taranko, M. Wiertel, and R. Taranko<br/> We study theoretically the transient electron transport in the multiple quantum dots (QDs) systems forced by the suddenly applied bias voltage. Depending on the quantum dots configuration and parameters describing the considered system different beat patterns of the resulting transient current are o ... [J. Appl. Phys. 111, 023711 (2012)] published Thu Jan 26, 2012. http://link.aip.org/link/?JAP/111/023707/1&agg=rss V. Wagener, M. C. Wagener, and J. R. Botha<br/> The use of dimethylcadmium as a potential p-type dopant source during the growth of InAs by metalorganic vapor phase epitaxy has been investigated. Thermoelectric measurements were used to accurately determine the doping density of the epilayers. A linear doping efficiency was attained for low DMCd ... [J. Appl. Phys. 111, 023707 (2012)] published Wed Jan 25, 2012. http://link.aip.org/link/?JAP/111/023710/1&agg=rss Karthik Sridhara, Lukasz Borowik, Denis Mariolle, Nicolas Chevalier, and Jean-Philippe Colonna<br/> We report the charge storage capacity of silicon nitride using Kelvin force microscopy (KFM). KFM is performed under various environments and for different thicknesses of SiN (3 nm, 6 nm, and 9 nm) on top of a 10-nm SiO blocking oxide. We prove increased storage capacity with increased thickness and ... [J. Appl. Phys. 111, 023710 (2012)] published Wed Jan 25, 2012. http://link.aip.org/link/?JAP/111/023709/1&agg=rss Qiong Bai, Weichao Wang, Qiming Zhang, and Meng Tao<br/> The n-type doping in the cuprous oxide (CuO) synthesized from an acidic solution environment has been studied by the first-principles calculations. The dopants of F, Cl, and Br in substitution of an O atom have low formation energies. They present an n-type conduction behavior with donor levels belo ... [J. Appl. Phys. 111, 023709 (2012)] published Wed Jan 25, 2012. http://link.aip.org/link/?JAP/111/023708/1&agg=rss Ramesh Chandra Mallik, Eckhard Mueller, and Il-Ho Kim<br/> In-filled and Ge-doped CoSb skutterudites materials were synthesized by an induction melting process which was followed by annealing at 650 degrees C for 7 days. A structural, compositional, and morphological study was carried out by X-ray diffraction (XRD), electron probe micro analysis (EPMA), an ... [J. Appl. Phys. 111, 023708 (2012)] published Wed Jan 25, 2012.