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1.  Junction lines of inversion domain boundaries with stacking faults in GaN 
J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, H. M. Polatoglou, A. Serra, A. Béré, G. Nouet, and Th. Karakostas
Phys. Rev. B 70, 115331 (2004)  Full Text: [   [ PROLA Link ] ]   Order Document
2.  Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra 
V. A. Novikov and V. V. Peshev
Semiconductors 32, 366 (1998)  Full Text: [   PDF (133 kB) ]   Order Document
3.  High-resolution spectroscopy of the zero-phonon line of the deep donor EL2 in GaAs 
C. Hecht, R. Kummer, M. Thoms, and A. Winnacker
Phys. Rev. B 55, 13625 (1997)  Full Text: [   [ PROLA Link ] ]   Order Document
4.  Isolated Hydrogen Molecules in GaAs 
J. Vetterhöffer, J. Wagner, and J. Weber
Phys. Rev. Lett. 77, 5409 (1996)  Full Text: [   [ PROLA Link ] ]   Order Document
5.  Metastable states of Si donors in AlxGa1–xAs 
Y. B. Jia and H. G. Grimmeiss
J. Appl. Phys. 80, 4395 (1996)  Full Text: [   PDF (101 kB) ]   Order Document
6.  Photoexcited states of DX centers in Si doped AlxGa1–xAs 
Y. B. Jia and H. G. Grimmeiss
J. Appl. Phys. 80, 3493 (1996)  Full Text: [   PDF (222 kB) ]   Order Document
7. Theory of hydrogen-decorated gallium vacancies in GaAs and of their radiative complexes 
A. Amore Bonapasta and M. Capizzi
Phys. Rev. B 52, 11044 (1995)   [ PROLA Link ]
8.  Donors bound to X valleys in type-II GaAs–AlAs quantum well structures 
Gerald Weber
Appl. Phys. Lett. 67, 1447 (1995)  Full Text: [   PDF (83 kB) ]   Order Document
9. Linewidth analysis of the photoluminescence of InxGa1 – xAs/GaAs quantum wells (x=0.09, 0.18, 1.0) 
A. Patanè, A. Polimeni, M. Capizzi, and F. Martelli
Phys. Rev. B 52, 2784 (1995)   [ PROLA Link ]
10. 1s-2p ± infrared-absorption spectra of donor-doped quantum wells under electric and magnetic fields 
A. Latgé, N. Porras-Montenegro, and L. E. Oliveira
Phys. Rev. B 51, 13344 (1995)   [ PROLA Link ]
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