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1.  Electronic properties and structure of a-Si : H films with higher photosensitivity 
O. A. Golikova and M. M. Kazanin
Semiconductors 33, 335 (1999)  Full Text: [   PDF (73 kB) ]   Order Document
2.  N–O related shallow donors in silicon: Stoichiometry investigations 
H. E. Wagner, H. Ch. Alt, W. von Ammon, F. Bittersberger, A. Huber, and L. Koester
Appl. Phys. Lett. 91, 152102 (2007)  Full Text: [    Full Text   PDF (93 kB) ]   Order Document
3.  Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial 
O. Marty, T. Nychyporuk, J. de la Torre, V. Lysenko, G. Bremond, and D. Barbier
Appl. Phys. Lett. 88, 101909 (2006)  Full Text: [    Full Text   PDF (121 kB) ]   Order Document
4.  Photoluminescence of highly porous nanostructured Si-based thin films deposited by pulsed laser ablation 
D.-Q. Yang, V. Ethier, E. Sacher, and M. Meunier
J. Appl. Phys. 98, 024310 (2005)  Full Text: [    Full Text   PDF (513 kB) ]   Order Document
5.  Recombination activity of iron-gallium and iron-indium pairs in silicon 
Jan Schmidt and Daniel Macdonald
J. Appl. Phys. 97, 113712 (2005)  Full Text: [    Full Text   PDF (119 kB) ]   Order Document
6.  Photoluminescence of Nanocrystalline Silicon Formed by Rare-Gas Ion Implantation 
A. A. Ezhevskii, M. Yu. Lebedev, and S. V. Morozov
Phys. Solid State 47, 18 (2005)  Full Text: [   PDF (93 kB) ]   Order Document
7.  Evidence for capture of holes into resonant states in boron-doped silicon 
S. T. Yen, V. N. Tulupenko, E. S. Cheng, P. K. Chung, C. P. Lee, A. T. Dalakyan, and K. A. Chao
J. Appl. Phys. 96, 4970 (2004)  Full Text: [    Full Text   PDF (182 kB) ]   Order Document
8.  Ion effects on CF2 surface interactions during C3F8 and C4F8 plasma processing of Si 
Ina T. Martin and Ellen R. Fisher
J. Vac. Sci. Technol. A 22, 2168 (2004)  Full Text: [    Full Text   PDF (235 kB) ]   Order Document
9.  Elevated-temperature electrical characteristics of mechanically strained Si devices 
B. M. Haugerud, L. A. Bosworth, and R. E. Belford
J. Appl. Phys. 95, 2792 (2004)  Full Text: [    Full Text   PDF (190 kB) ]   Order Document
10.  Photoluminescence Intensity Analysis in Application to Contactless Characterization of Silicon Wafers 
A. Buczkowski, B. Orschel, S. Kim, S. Rouvimov, B. Snegirev, M. Fletcher, and F. Kirscht
J. Electrochem. Soc. 150, G436 (2003)  Full Text: [    Full Text   PDF (901 kB) ]   Order Document
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