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1.  Impurity scattering induced excitonic polariton damping and its influence on the reflectance spectra of GaN epilayers 
Y. J. Wang, R. X. Wang, G. Q. Li, and S. J. Xu
J. Appl. Phys. 106, 013514 (2009)  Full Text: [    Full Text   PDF (367 kB) ]   Order Document
2.  Band offsets of high K gate oxides on III-V semiconductors 
J. Robertson and B. Falabretti
J. Appl. Phys. 100, 014111 (2006)  Full Text: [    Full Text   PDF (366 kB) ]   Order Document
Rapid 3.  Kinetics of surfactant-mediated epitaxy of III-V semiconductors 
N. Grandjean and J. Massies
Phys. Rev. B 53, R13231 (1996)  Full Text: [   [ PROLA Link ] ]   Order Document
4.  The impact of III-V semiconductors on microelectromechanical systems 
R.C. Woods and A.L. Powell
Eng. Sci. Educ. J. 3, 271 (1994)  Full Text: [   PDF (670 kB) ]   Order Document
5.  Polarized photoluminescence from point emitters in ordered GaxIn1−xP 
B. Fluegel, A. Mascarenhas, and J. F. Geisz
Phys. Rev. B 80, 125333 (2009)  Full Text: [   PDF (165 kB) ]   Order Document
6.  Strain balanced InAs/InAsSb superlattice structures with optical emission to 10  µm 
D. Lackner, O. J. Pitts, M. Steger, A. Yang, M. L. W. Thewalt, and S. P. Watkins
Appl. Phys. Lett. 95, 081906 (2009)  Full Text: [    Full Text   PDF (240 kB) ]   Order Document
7.  Photoluminescence properties of erbium doped InGaN epilayers 
A. Sedhain, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada
Appl. Phys. Lett. 95, 041113 (2009)  Full Text: [    Full Text   PDF (361 kB) ]   Order Document
8.  Damage in III/V semiconductors caused by hard- and soft-etching plasmas 
Gerhard Franz
J. Vac. Sci. Technol. A 19, 762 (2001)  Full Text: [    Full Text   PDF (1440 kB) ]   Order Document
9.  Deep donor levels (DX centers) in III-V semiconductors 
P. M. Mooney
App. Phys. Rev. 1990, 1 (1990)  Full Text: [   PDF (5193 kB) ]   Order Document
10.  Spectral dependence of time-resolved photoreflectance of InN epitaxial films 
Tsong-Ru Tsai, Cheng-Yu Chang, Chih-Wei Kuo, Jih-Shang Hwang, Tai-Yuan Lin, and Shangjr Gwo
Appl. Phys. Lett. 95, 142108 (2009)  Full Text: [    Full Text   PDF (210 kB) ]   Order Document
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